Abstract:Three-dimensional (3-D) integration and packaging with through silicon via (TSV) is an emerging trend for overcoming the limitation of integration scale in Micro-electro-mechanical systems (MEMS) packaging. It is helpful for the realization of high density and reliability of micro-devices and sensors. The technology of fabricating copper (Cu) TSVs by electroplating is applied to provide communication links in vertical direction. The fabrication of defect-free and time-saving TSV is our destination. In this paper, the Cu deposition mechanism was analyzed and the process was expressed by a series of electrochemical equations. Finite element models were built to simulate two different kinds of Cu electroplating processes in through-hole via. 100 mm diameter and 370 mu m thick polished silicon wafers were chosen in experiments. Under the guidance of the simulation results, defect-free Cu TSVs were obtained by using double-sided and bottom-up electroplating methods respectively. Electrolyte additives affected the Cu deposition velocity and direction to a certain extent. Comparing the two electroplating methods, we found that double-sided electroplating is economical and time-saving. While, bottom-up electroplating has the capability in filling the through-holes whose aspect ratio are greater than 10:1. It only took about 2.5 h and 3.5 h to obtain the intact Cu TSVs by using double-sided and bottom-up electroplating methods respectively. Finally, Cu TSVs were successfully applied to the Wafer Level Packaging (WLP) Pirani vacuum gauges for the vacuum packaging of MEMS. The vertical leakage rate of bonding samples ranged from 1.0E-9 Pa m(3)/s to 4.5E-8 Pa m(3)/s, which were measured by helium leak detector. (C) 2013 Elsevier B.V. All rights reserved.

Copper Chemical Mechanical Polishing and Wafer Thinning with Temporary Bonding for Through Silicon Via Interconnect

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Improvement of Via Dishing and Non-Uniformity in TSV Chemical Mechanical Planarization

TSV CMP process optimization and dishing defect reduction

Integrated wafer thinning process with TSV electroplating for 3D stacking

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

Elimination the CMP Defects for TSV Process by Optimizing the Copper Electrodeposition

An Efficient and High Quality Chemical Mechanical Polishing Method for Copper Surface in 3D TSV Integration

CU seed, CMP process development and via resistance extraction in through silicon via technology

Non-uniformity and Removal Rate Selectivity Investigations in Through Silicon Via Front Side CMP

Optimization of Cu protrusion of wafer-to-wafer hybrid bonding for HBM packages application

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

An experimental investigation of silicon wafer thinning by sequentially using constant-pressure diamond grinding and fixed-abrasive chemical mechanical polishing

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

A novel plating bath device for reducing surface copper thickness and improving wafer-scale uniformity

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Simulation and Fabrication of Two Cu TSV Electroplating Methods for Wafer-Level 3D Integrated Circuits Packaging

Integrated Process for Silicon Wafer Thinning

Optimizing Copper Filling Process For Through Silicon Via (TSV)

A Research Of The Micro-Damage Of The Backside Tsv Heterogeneous Microstructure After Cmp Process With Alkaline Slurry

Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)