Abstract:In this study, the effects of different influence factors on electroplating-based via-filling process were studied in a systematic manner. A through-silicon-via (TSV) chip was firstly designed, the chip size was $16\times 10{\rm mm}^{2}$ with the TSV interconnects. The via was in diameter of $50\mu {\rm m}$ and depth of $75\mu {\rm m}$. The deep reactive ion etching (DRIE) technique was employed to fabricate the vias onto the silicon wafer. In order to fill up the vias by using the electroplating process, the ${\rm SiO}_{2}$ isolation layer was firstly prepared onto the sidewall and the defined surface of the wafer using the plasma enhanced chemical vapor deposition (PECVD) technique, the TiW barrier layer was prepared onto the ${\rm SiO}_{2}$ layer with the sputtering process, the Cu seed layer was then deposited onto the barrier layer by the sputtering process to provide a foundation for copper growth during electroplated deposition. To achieve the “bottom-up” via-filling, the addictives were added into the copper plating solution. The results showed that the void free Cu filling can be achieved with an optimal additives ratio. The variation in both via opening and depth were found to be key factors influencing the via-filling quality. The process parameters such as current density, power waveform and so on were found to affect the vial filling quality. A comparison on the effects of key process parameters was made, showing that the current density, voltage waveform, and pulse reserve are three key parameters that affect the filling quality more than other parameters.

Fabrication, electrical characterization and reliability study of partially electroplated tapered copper through-silicon vias

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Reliability study of through-silicon via (TSV) copper filled interconnects

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Electrothermal modelling of through silicon via (TSV) interconnects

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Reliable Design of Electroplated Copper Through Silicon Vias

Numerical and Experimental Investigation of Thermomechanical Deformation in High-Aspect-Ratio Electroplated Through-Silicon Vias

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Microfabrication of Through Silicon Vias (TSV) for 3D SiP

Fabrication and Characterization of Annular Copper Through-Silicon Via for Passive Interposer Applications

Fabrication and electrical characterization of sub-micron diameter through-silicon via for heterogeneous three-dimensional integrated circuits

Investigate the Microstructure Changes in Cu Through-Silicon Vias (tsvs) under Thermal Process

Parametric study of electroplating-based via-filling process for TSV applications

Through-silicon via arrays manufactured by photo assisted electrochemical etching and copper electroplating under SC-CO2 environment

CU seed, CMP process development and via resistance extraction in through silicon via technology

Influence of Copper Pumping on Integrity and Stress of Through-Silicon Vias