Abstract:High aspect ratio (HAR) through-silicon vias (TSVs) are in urgent need to achieve smaller keep-out zones (KOZs) and higher integration density for the miniaturization of high-performance three-dimensional (3D) integration of integrated circuits (IC), micro-electro-mechanical systems (MEMS), and other devices. In this study, HAR TSVs with a diameter of 11 μm and an aspect ratio of 10:1 are successfully fabricated in a low-cost process flow. Conformal polyimide (PI) liners are deposited using a vacuum-assisted spin coating technique, and the effects of spin coating time and speed on the deposition results are discussed. Then, continuous Cu seed layers are fabricated by sequential sputtering and ultrasound-assisted electroless plating. Additionally, void-free and seamless Cu conductors are formed by electroplating. Moreover, a semi-additive method is used to fabricate the redistribution layers (RDLs) on the insulating layers of photosensitive PI (PSPI). Notably, a plasma bombardment process is introduced to remove residual PSPI in the contact windows between RDLs and central pillars. Results show that the resistance of a single TSV from a daisy chain of 144 TSVs with density of 2000/mm2 is about 28 mΩ. Additionally, the S-parameters of a single TSV are obtained using L-2L de-embedding technology, and the experimental and simulated results agree well. The proposed low-cost fabrication technologies and the related electrical characterization of PI-TSVs are significant for the application of HAR TSVs in modern heterogeneous integration systems.

Microfabrication of Through Silicon Vias (TSV) for 3D SiP

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Research on deep RIE-based through-si-via micromachining for 3-D system-in-package integration

Design and analysis of an I-shaped TSV structure for 3D SiP

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

A wet process to etch arrayed vias for through silicon via application of 3D packaging

Fabrication and Filling Quality Optimization of the High Density and Small Size Through Silicon Via Array for Three-Dimensional Packaging

Fabrication and electrical characterization of sub-micron diameter through-silicon via for heterogeneous three-dimensional integrated circuits

High Aspect Ratio Copper Through-Silicon-vias for 3D Integration

Fabrication, electrical characterization and reliability study of partially electroplated tapered copper through-silicon vias

Fabrication and Electrical Characterization of High Aspect Ratio Through-Silicon Vias with Polyimide Liner for 3D Integration

CU seed, CMP process development and via resistance extraction in through silicon via technology

Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Through silicon via copper electrodeposition for 3D integration

Reliable Design of Electroplated Copper Through Silicon Vias

Copper electroplating technique for efficient manufacturing of low-cost silicon interposers

Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

High Density Through Silicon Via (TSV)