Abstract:Three-dimensional (3D) integrated circuit (IC) technologies are receiving increasing attention due to their capability to enhance microchip function and performance. While current efforts are focused on the 3D process development, adequate reliability of copper (Cu) through-silicon vias (TSVs) is essential for commercial high-volume manufacturing. Annealing a silicon device with copper TSVs causes high stresses in the copper and may cause a “pumping” phenomenon in which copper is forced out of the blind TSV to form a protrusion. This is a potential threat to the back-end interconnect structure, particularly for low-κ materials, since it can lead to cracking or delamination. In this work, we studied the phenomenon of Cu protrusion and microstructural changes during thermal annealing of a TSV wafer. The extruded Cu-TSV was observed using scanning electron microscopy (SEM), 3D profilometry, and atomic force microscopy (AFM). The electron backscatter diffraction (EBSD) technique was employed to study the grain orientation of Cu-TSV and evolution of the grain size as a function of annealing temperature. The elastic modulus and yield stress of copper were characterized using nanoindentation. A model for Cu protrusion is proposed to provide insight into the failure mechanism. The results help to solve a key TSV-related manufacturing yield and reliability challenge by enabling high-throughput TSV fabrication for 3D IC integration.

CU seed, CMP process development and via resistance extraction in through silicon via technology

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Effective Approach for TSV Cu Plating Gap Fill Improvement

TSV CMP process optimization and dishing defect reduction

Microfabrication of Through Silicon Vias (TSV) for 3D SiP

Fabrication and In-Situ Evaluation of Copper TSV Interconnection

TSV Filling Technology using Cu Electrodeposition

Copper Chemical Mechanical Polishing and Wafer Thinning with Temporary Bonding for Through Silicon Via Interconnect

Research of Vertical via Based on Silicon, Ceramic and Glass

3D interconnection process development and integration with low stress TSV

Improvement of Via Dishing and Non-Uniformity in TSV Chemical Mechanical Planarization

Fast copper plating process for TSV fill

Copper electroplating technique for efficient manufacturing of low-cost silicon interposers

Fabrication and Characterization of Annular Copper Through-Silicon Via for Passive Interposer Applications

Through silicon via copper electrodeposition for 3D integration

Fabrication, electrical characterization and reliability study of partially electroplated tapered copper through-silicon vias

Wet processes deposition for HAR TSV metallization using electroless Co liner and alkaline Cu seed layer

Optimization of TSV Leakage in Via-Middle TSV Process for Wafer-Level Packaging

Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication