Abstract:In this study, the effects of different influence factors on electroplating-based via-filling process were studied in a systematic manner. A through-silicon-via (TSV) chip was firstly designed, the chip size was $16\times 10{\rm mm}^{2}$ with the TSV interconnects. The via was in diameter of $50\mu {\rm m}$ and depth of $75\mu {\rm m}$. The deep reactive ion etching (DRIE) technique was employed to fabricate the vias onto the silicon wafer. In order to fill up the vias by using the electroplating process, the ${\rm SiO}_{2}$ isolation layer was firstly prepared onto the sidewall and the defined surface of the wafer using the plasma enhanced chemical vapor deposition (PECVD) technique, the TiW barrier layer was prepared onto the ${\rm SiO}_{2}$ layer with the sputtering process, the Cu seed layer was then deposited onto the barrier layer by the sputtering process to provide a foundation for copper growth during electroplated deposition. To achieve the “bottom-up” via-filling, the addictives were added into the copper plating solution. The results showed that the void free Cu filling can be achieved with an optimal additives ratio. The variation in both via opening and depth were found to be key factors influencing the via-filling quality. The process parameters such as current density, power waveform and so on were found to affect the vial filling quality. A comparison on the effects of key process parameters was made, showing that the current density, voltage waveform, and pulse reserve are three key parameters that affect the filling quality more than other parameters.

Effective Approach for TSV Cu Plating Gap Fill Improvement

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Influence of Electroplating Current Density on Through Silicon Via Filling

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Fast copper plating process for TSV fill

CU seed, CMP process development and via resistance extraction in through silicon via technology

TSV Filling Technology using Cu Electrodeposition

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Pure Bottom-up filling process for efficient TSV metallization

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

Optimization of innovative approaches to the shortening of filling times in 3D integrated through-silicon vias (TSVs)

Optimizing Copper Filling Process For Through Silicon Via (TSV)

Parametric study of electroplating-based via-filling process for TSV applications

Cu filling of TSV using various current forms for three‐dimensional packaging application

Understanding Effect of Additives in Copper Electroplating Filling for Through Silicon Via

Moving Boundary Simulation and Experimental Verification of High Aspect-Ratio Through-Silicon-Vias for 3-D Integration

Effect of Ultrasound on Copper Filling of High Aspect Ratio Through-Silicon Via (TSV)

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

Dynamics of filling process of through silicon via under the ultrasonic agitation on the electroplating solution

Simultaneous filling of through silicon vias (TSVs) with different aspect ratios using multi-step direct current density

Optimization of TSV Leakage in Via-Middle TSV Process for Wafer-Level Packaging