Abstract:This review investigates the measurement methods employed to assess the geometry and electrical properties of through-silicon vias (TSVs) and examines the reliability issues associated with TSVs in 3D integrated circuits (ICs). Presently, measurements of TSVs primarily focus on their geometry, filling defects, and the integrity of the insulating dielectric liner. Non-destructive measurement techniques for TSV contours and copper fillings have emerged as a significant area of research. This review discusses the non-destructive measurement of contours using high-frequency signal analysis methods, which aid in determining the stress distribution and reliability risks of TSVs. Additionally, a non-destructive thermal detection method is presented for identifying copper fillings in TSVs. This method exploits the distinct external characteristics exhibited by intact and defective TSVs under thermoelectric coupling excitation. The reliability risks associated with TSVs in service primarily arise from copper contamination, thermal fields in 3D-ICs, stress fields, noise coupling between TSVs, and the interactions among multiple physical fields. These reliability risks impose stringent requirements on the design of 3D-ICs featuring TSVs. It is necessary to electrically characterize the influence of copper contamination resulting from the TSV filling process on the reliability of 3D-ICs over time. Furthermore, the assessment of stress distribution in TSVs necessitates a combination of micro-Raman spectroscopy and finite element simulations. To mitigate cross-coupling effects between TSVs, the insertion of a shield between them is proposed. For efficient optimization of shield placement at the chip level, the geometric model of TSV cross-coupling requires continuous refinement for finite element calculations. Numerical simulations based on finite element methods, artificial intelligence, and machine learning have been applied in this field. Nonetheless, comprehensive design tools and methods in this domain are still lacking. Moreover, the increasing integration of 3D-ICs poses challenges to the manufacturing process of TSVs.

Fabrication and In-Situ Evaluation of Copper TSV Interconnection

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

Fabrication and Characterization of Annular Copper Through-Silicon Via for Passive Interposer Applications

Fabrication of Microchannel Embedded Tsv Interposer and Its Influence on Tsv'S Electrical Parameters

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

CU seed, CMP process development and via resistance extraction in through silicon via technology

Copper electroplating technique for efficient manufacturing of low-cost silicon interposers

Investigate the Microstructure Changes in Cu Through-Silicon Vias (tsvs) under Thermal Process

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Fabrication, electrical characterization and reliability study of partially electroplated tapered copper through-silicon vias

Fabrication and Traceable Quality Evaluation of Fine Pitch Tsv with Self-Integrated Micro Heater and Thermocouple

Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication

Thermomechanical Reliability of a Cu-TSV Integration Model Based on 3D Fabrication Processes

Copper-Based TSV: Interposer

A Short Review of Through-Silicon Via (TSV) Interconnects: Metrology and Analysis

Optimization of thermal loads in TSV fabrication process based on real-time micro deformation process analysis of copper

Stress Evolution Mechanism and Thermo-Mechanical Reliability Analysis of Copper-Filled TSV Interposer

Fast copper plating process for TSV fill

Effective Approach for TSV Cu Plating Gap Fill Improvement