Abstract:A real-time micro deformation process of copper in through silicon Vias(TSVs) was revealed for optimizing thermal loads of TSV preparation technologies based on the dynamic real-time measurement system (DRMS) and the finite element method(FEM). The change of copper ’ s protrusion in TSVs with temperature, tested by the DRMS, was considered to be the important criteria. An axial symmetry TSV basic model was built to simulate the copper’s micro-mechanical responses under these different thermal loads. The results of FEM match well with the experiment curve in both shape and value, because the creep of TSV-Cu can be precisely described when n is 5. FEM results show that slow linear heating has smaller protrusion than fast linear heating heating and step heating can make further improvement. Besides, relatively fast cooling enhances reliability for it reducing the risk of crack in interface between TSV-Cu and BEOL. Creep plays a key role in copper’s deformation revealed by simulation, since larger heating rate easily causes stress accumulation in the heating stage, and larger stress leads to larger creep deformation, naturally the protrusion under fast heating is larger than that under slow heating. By the above simulation and experimental methods, the real-time thermal deformation process and micro-morphology of TSV was understood in detail, thus the thermomechanical reliability of TSV was improved by optimization of thermal load.

Fabrication of Microchannel Embedded Tsv Interposer and Its Influence on Tsv'S Electrical Parameters

Electrothermal modelling of through silicon via (TSV) interconnects

Process Development and Characterization for Integrating Microchannel into Tsv Interposer

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Fabrication and In-Situ Evaluation of Copper TSV Interconnection

Electrothermal characteristics of carbon-based through-silicon via (TSV) channel

Thermal and Electrical Characterization of TSV Interposer Embedded with Microchannel for 2.5D Integration of GaN RF Devices

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

Fabrication and Characterization of Annular Copper Through-Silicon Via for Passive Interposer Applications

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Investigate the Microstructure Changes in Cu Through-Silicon Vias (tsvs) under Thermal Process

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Process Development of Thick Si Interposer for 2.5d Integration of Rf Mems Devices

Electrical modeling, simulation and SPICE model extraction of TSVs in silicon interposer

Parametric Study, Modeling of Etching Process and Application for Tapered Through-Silicon-via

Fabrication Process of A Tsv Interposer for Radio Frequency Chip with Integrated Passive Devices

Fabrication and Traceable Quality Evaluation of Fine Pitch Tsv with Self-Integrated Micro Heater and Thermocouple

Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication

Optimization of thermal loads in TSV fabrication process based on real-time micro deformation process analysis of copper

CU seed, CMP process development and via resistance extraction in through silicon via technology

Microstructure Simulation and Thermo-Mechanical Behavior Analysis of Cu-filled Through Silicon Vias (tsvs) Using Combined Monte Carlo and Finite Element Method