Abstract:High aspect ratio (HAR) through-silicon vias (TSVs) are in urgent need to achieve smaller keep-out zones (KOZs) and higher integration density for the miniaturization of high-performance three-dimensional (3D) integration of integrated circuits (IC), micro-electro-mechanical systems (MEMS), and other devices. In this study, HAR TSVs with a diameter of 11 μm and an aspect ratio of 10:1 are successfully fabricated in a low-cost process flow. Conformal polyimide (PI) liners are deposited using a vacuum-assisted spin coating technique, and the effects of spin coating time and speed on the deposition results are discussed. Then, continuous Cu seed layers are fabricated by sequential sputtering and ultrasound-assisted electroless plating. Additionally, void-free and seamless Cu conductors are formed by electroplating. Moreover, a semi-additive method is used to fabricate the redistribution layers (RDLs) on the insulating layers of photosensitive PI (PSPI). Notably, a plasma bombardment process is introduced to remove residual PSPI in the contact windows between RDLs and central pillars. Results show that the resistance of a single TSV from a daisy chain of 144 TSVs with density of 2000/mm2 is about 28 mΩ. Additionally, the S-parameters of a single TSV are obtained using L-2L de-embedding technology, and the experimental and simulated results agree well. The proposed low-cost fabrication technologies and the related electrical characterization of PI-TSVs are significant for the application of HAR TSVs in modern heterogeneous integration systems.

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

Fabrication and Filling Quality Optimization of the High Density and Small Size Through Silicon Via Array for Three-Dimensional Packaging

A New Method to Fabricate Sidewall Insulation of TSV Using a Parylene Protection Layer

Microfabrication of Through Silicon Vias (TSV) for 3D SiP

Research of Vertical via Based on Silicon, Ceramic and Glass

Fabrication and Characterization of Annular Copper Through-Silicon Via for Passive Interposer Applications

Fabrication of Microchannel Embedded Tsv Interposer and Its Influence on Tsv'S Electrical Parameters

Fabrication and Traceable Quality Evaluation of Fine Pitch Tsv with Self-Integrated Micro Heater and Thermocouple

Design and analysis of an I-shaped TSV structure for 3D SiP

Fabrication and In-Situ Evaluation of Copper TSV Interconnection

Fabrication and electrical characterization of sub-micron diameter through-silicon via for heterogeneous three-dimensional integrated circuits

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

Fabrication and Electrical Characterization of High Aspect Ratio Through-Silicon Vias with Polyimide Liner for 3D Integration

Fine-Pitch Through-Silicon Via Integration with Self-Aligned Back-Side Benzocyclobutene Passivation Layer

CU seed, CMP process development and via resistance extraction in through silicon via technology

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

3D interconnection process development and integration with low stress TSV

Bottom-up Filling of Through Silicon Via (TSV) with Parylene As Sidewall Protection Layer

Parametric Study, Modeling of Etching Process and Application for Tapered Through-Silicon-via

High Density Through Silicon Via (TSV)