Abstract:In this study, the effects of different influence factors on electroplating-based via-filling process were studied in a systematic manner. A through-silicon-via (TSV) chip was firstly designed, the chip size was $16\times 10{\rm mm}^{2}$ with the TSV interconnects. The via was in diameter of $50\mu {\rm m}$ and depth of $75\mu {\rm m}$. The deep reactive ion etching (DRIE) technique was employed to fabricate the vias onto the silicon wafer. In order to fill up the vias by using the electroplating process, the ${\rm SiO}_{2}$ isolation layer was firstly prepared onto the sidewall and the defined surface of the wafer using the plasma enhanced chemical vapor deposition (PECVD) technique, the TiW barrier layer was prepared onto the ${\rm SiO}_{2}$ layer with the sputtering process, the Cu seed layer was then deposited onto the barrier layer by the sputtering process to provide a foundation for copper growth during electroplated deposition. To achieve the “bottom-up” via-filling, the addictives were added into the copper plating solution. The results showed that the void free Cu filling can be achieved with an optimal additives ratio. The variation in both via opening and depth were found to be key factors influencing the via-filling quality. The process parameters such as current density, power waveform and so on were found to affect the vial filling quality. A comparison on the effects of key process parameters was made, showing that the current density, voltage waveform, and pulse reserve are three key parameters that affect the filling quality more than other parameters.

Bottom-up Filling of Through Silicon Via (TSV) with Parylene As Sidewall Protection Layer

Influence of Electroplating Current Density on Through Silicon Via Filling

Wetting Process of Copper Filling in Through Silicon Vias

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Modeling the Bottom-Up Filling of Through Silicon Vias with Different Additives

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

A New Method to Fabricate Sidewall Insulation of TSV Using a Parylene Protection Layer

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

Parametric study of electroplating-based via-filling process for TSV applications

Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating

Simultaneous filling of through silicon vias (TSVs) with different aspect ratios using multi-step direct current density

Copper Filling Process for Small Diameter, High Aspect Ratio Through Silicon Via (Tsv)

Study of a through-silicon/substrate via filling method based on the combinative effect of capillary action and liquid bridge rupture

Microfabrication of Through Silicon Vias (TSV) for 3D SiP

Fabrication and Characterization of Fine Pitch TSV Integration with Self-Aligned Backside Insulation Layer Opening.

Optimizing Copper Filling Process For Through Silicon Via (TSV)

Effective Approach for TSV Cu Plating Gap Fill Improvement

Fabrication and Filling Quality Optimization of the High Density and Small Size Through Silicon Via Array for Three-Dimensional Packaging

Cu filling of TSV using various current forms for three‐dimensional packaging application

Moving Boundary Simulation and Experimental Verification of High Aspect-Ratio Through-Silicon-Vias for 3-D Integration

Numerical simulation of copper electrodeposition for Through Silicon Via (TSV) with SPS-PEG-Cl additive system