Completely Filling of Through-Silicon-Vias with High Aspect Ratio by High Cavity Physical Vapor Deposition and Electroplating
Shuchao Bao,Yunting Zhu,Daquan Yu,Shaocheng Wu,Ke Li,Jiahui Wang,Qifei Xia,Zhongliang Liu,Manyu Wang
DOI: https://doi.org/10.1109/ICEPT59018.2023.10492061
2023-08-08
Abstract:Advanced packaging is gradually becoming an important means to continue Moore’s law and thus support the development of the integrated circuits field. However, the fabrication of high aspect ratio Through -Silicon-Via (TSV) has been a challenge that restricts the high-density 3D integration of chips. In this paper, we propose a new method of high aspect ratio TSV fully filled copper based on the combination of high cavity physical vapor deposition (PVD) and electroplating. SiO2 films were first deposited as insulating layers using atomic layer deposition (ALD), and the results showed that the prepared SiO2 films had low surface roughness. Then, high-cavity physical vapor deposition was used to sputter Ti and Cu as the barrier and seed layers, respectively, and the films were continuous and dense even at the bottom of the TSV. Finally, the TSV with a diameter of 3 μm and aspect ratio of 15:1 was filled without any holes or cracks using electroplating technology. This study greatly improves the problems of poor homogeneity, difficulty in industrialization, and high cost associated with the preparation of seed layers using the chemical plating method reported in the current literature, and provides a solution for the large-scale mass production of high aspect ratio TSV.
Materials Science,Engineering