Abstract:A finite element model which includes electromigration, thermomigration, stress migration and concentration diffusion is established to study the mass diffusion phenomenon. Numerical experiment is carried out to obtain the electrical, thermal, stress and atomic concentration fields of the sweat and through silicon via (TSV) structure under high current density load. The effectiveness of the electromigration FEM model is confirmed by the simulation of the sweat structure. The results from the simulation are consistent with the observation of the experiment conducted by Dallleau, D. et al. The current crowding, temperature distribution, von Mises and hydrostatic stress distribution and atomic concentration fields of the TSV structure is obtained from the numerical calculation. The current crowding occurs at the corner of the copper pad. The maximum compressive hydrostatic stress happens in the center of the copper via and the center of copper pads are under tensile hydrostatic stress which has important role in the migration of copper atoms. The probable location where the void and hillock may be generated is identified through the atomic distribution after 10000-second electromigration simulation. The migration failure mechanism which is critical for design and application of TSV technology in the 3D package is investigated.

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrothermal modelling of through silicon via (TSV) interconnects

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Structure Optimization of Through Silicon Via (TSV) Interconnect As Transmission Channel for 3D Integration

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Modeling and Application of Multi-Port TSV Networks in 3-D IC

3D Modeling and Finite-Element Full-Wave Simulation of TSV for Stack Up SIP Integration Applications

Analysis of Multiple Vias Coupling in Silicon Interposer by Using Cylindrical Mode Expansion Method

Capacitive coupling analysis of TSV array in 3D packaging

Scalable Modeling and Analysis of TSV Using Bumpless Interconnects Technology

Impact of Technology Scaling on Electrical Characteristics of Through-Silicon Via Correlated with Equivalent Circuits

Modeling of electromigration of the through silicon via interconnects

Finite Element Modeling on Electromigration of TSV Interconnect in 3D Package

Modeling of Through-Silicon Via (TSV) Interposer Considering Depletion Capacitance and Substrate Layer Thickness Effects

Research on Crosstalk Issue of Through Silicon Via for 3d Integration