Abstract:In this paper, high-frequency electrothermal characteristics of the power delivery network (PDN) are investigated for through-silicon-via (TSV)-based 3-D ICs by utilizing a self-developed electrothermal co-simulation solver. The solver circularly solves the full-wave electromagnetic equation and the steady heat conduction equation using the finite-element method. The preconditioned biconjugate gradient method combined with the element-by-element approximate factorization method is employed to speed up the simulation and save memory cost. Based on the solver, the impacts of the excitation condition and dielectric loss tangent are analyzed for a one-chip power grid, while the influence of TSV location is studied for a two-chip PDN structure. In the modeling, both the conductor and dielectric losses are taken into account, and the temperature dependence of material parameters is treated appropriately. As results, PDN impedance and self-heating-induced temperature rise are emphatically analyzed in a wide frequency range, and the electric field and temperature distributions of several resonance modes are presented. The results would be beneficial for the design and thermal management of 3-D PDNs.

PDN Impedance Modeling for Multiple Through Vias Array in Doped Silicon

Modeling of Power Distribution Network Based on Multi-Walled Carbon Nanotube TSVs for 3-D ICs

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Influence of Electroplating Current Density on Through Silicon Via Filling

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

Electrothermal modelling of through silicon via (TSV) interconnects

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Modeling of a Pair of Annular Through Silicon Vias (TSV)

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Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Silicon-Validated Power Delivery Modeling and Analysis on a 32-Nm DDR I/O Interface.

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Investigation of Carbon Nanotube-Based Through-Silicon Vias for PDN Applications

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration

Capacitive coupling analysis of TSV array in 3D packaging

Analysis of Multiple Vias Coupling in Silicon Interposer by Using Cylindrical Mode Expansion Method

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via