Abstract:With the development of integrated circuit towards the characteristics of the low-power consumption, miniaturization and high integration, three-dimensional integration technology based on Through-Silicon Via (TSV) comes into being. However, the thermal accumulation caused by the maximum stack density and the thermal stress caused by the mismatched thermal expansion coefficient between TSV surrounding materials will lead to the reliability problems such as circuit function failure and device performance drift. In this paper, the heat dissipation performance and thermal-mechanical reliability of TSV array in 2.5D silicon interposer were studied when the operation temperature is increased from 20°C to 100°C. Firstly, the influences of the geometrical parameters, such as the through hole radius, depth to width ratio, insulation thickness and TSV spacing, on thermal-mechanical reliability were analyzed for single TSV, paired TSV and 3*3 TSV array structures. Secondly, a configuration of TSV regular hexagonal array in silicon interposer is proposed to improve its heat dissipation performance.Our simulation results disclose that the stress is mainly concentrated at the junction where SiO2 layer deviates to copper and silicon substrate deviates to SiO2, which indicates the SiO2 layer is most prone to fracture. The through hole radius should be designed as small as possible to reduce the thermal stress, and a thicker SiO2 insulation layer thickness will induce the better thermal-mechanical stability of TSV. The optimized TSV's depth to width ratio should be set above 5 with the simultaneous consideration of the stress for silicon substrate, insulating layer, filled copper. For multiple TSVs, the spacing should be greater than twice the diameter to eliminate the influence of thermal stress between TSVs. In addition, in the case of the same spacing, the equivalent unit temperature of TSV regular hexagonal array distribution is 2.9°C lower than that of conventional matrix array distribution. The analysis and design of TSV array in 2.5D silicon interposer is promising to offer guideline to the future advanced package development.

Thermal and Electrical Characterization of TSV Interposer Embedded with Microchannel for 2.5D Integration of GaN RF Devices

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Electrothermal characteristics of carbon-based through-silicon via (TSV) channel

Process Development of A New Tgv Interposer for Wafer Level Package of Inertial Mems Device

Fabrication of Microchannel Embedded Tsv Interposer and Its Influence on Tsv'S Electrical Parameters

On the Efficacy of Through-Silicon-Via Inductors

Process Development and Characterization for Integrating Microchannel into Tsv Interposer

Investigation of an Embedded Cooling RF Silicon Interposer for an Ultrahigh Heat Flux GaN TR Array

Design, Fabrication, and Radio Frequency Property Evaluation of a Through-Glass-via Interposer for 2.5D Radio Frequency Integration

The Embedded Cooling Silicon 3D Stacking Thermal Test Vehicle

Fabrication and RF Property Evaluation of High-Resistivity Si Interposer for 2.5-D/3-D Heterogeneous Integration of RF Devices

Thermal Resistance Analysis for a High Power 3D Integrated RF Module Based on TSV Interposer

Process Development of Thick Si Interposer for 2.5d Integration of Rf Mems Devices

Thermal-Mechanical Analysis of TSV Array in 2.5D Silicon Interposer

Design. Fabrication, and Test of an Embedded Si-Glass Microchannel Heat Sink for High-power RF Application

Multi-physical field coupling effect in micro pin-fin channel cooling with coaxial-like through-silicon via (TSV) for three-dimensional integrated chip (3D-IC)

Assembly and Testing of Thermal Test Chip on Silicon Interposer with Through Silicon Via

A 2.5D Integrated L Band Receiver Based on High Resistivity Si Interposer

Modeling of the RF Coaxial TSV Configuration Inside the Silicon Interposer with Embedded Cooling Cavity

Double-Shielded Interposer with Highly Doped Layers for High-Speed Signal Propagation

Coupled Electrical-Thermal-Fluidic Multi-Physics Analysis Of TSV Pin Fin Microchannel In The 3D-Ic