Abstract:The modeling and simulation of via's effect on the data transferring or high frequency signal path and device performance have been one of the major concerns in the designing and testing of multilayered electric interconnects in applications like highly integrated system-in-package (SIP) and high-speed circuitry design. The authors of this paper explore the 3D full-wave modeling of through Si vias (TSV) in multilayered SIP and simulate their effects on spectral performance and signal integrity with the help of finite element methodologies. The emphasis of the research is on the revealing of 3D electromagnetic field distribution on fundamental single and differential TSV interlayer interconnects, so that more detailed parasitic effects may be found and equivalent model closer to the reality can be obtained, compared with the methodology based on purely circuit analysis. And the effect of the variations in the TSV diameter and height and the effect of grounded TSV are revealed. Additionally, S21 performance and field distribution of two sort of paired vias are displayed. Waveports are adopted for the full-wave modeling and all the cases are in 0~10GHz range.

Electrical modeling, simulation and SPICE model extraction of TSVs in silicon interposer

Electrothermal modelling of through silicon via (TSV) interconnects

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

Modeling of a Pair of Annular Through Silicon Vias (TSV)

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

A Physics-Aware Methodology for Equivalent Circuit Model Extraction of TSV-inductors

Transmission Characteristics Of A Coaxial Through-Silicon Via (C-Tsv) Interconnect

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Modeling of TSV-based Solenoid Inductors for 3-D Integration

Electrothermal investigation on through silicon multi-walled carbon nanotube via interconnects

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Capacitive coupling analysis of TSV array in 3D packaging

Modeling and Application of Multi-Port TSV Networks in 3-D IC

Full RLGC Model Extraction of Through Silicon Via (TSV) with Charge Distribution Effects

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

A Rigorous Model for Through-Silicon Vias with Ohmic Contact in Silicon Interposer

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

3D Modeling and Finite-Element Full-Wave Simulation of TSV for Stack Up SIP Integration Applications

Analysis of Multiple Vias Coupling in Silicon Interposer by Using Cylindrical Mode Expansion Method