Abstract:Due to the slow scaling of board and package technology, on-chip inductor has shown promising potential to enable more compact design and smaller parasitics for inductor-based designs, such as voltage regulator, resonant clocking, filter, etc. On the other hand, conventional on-chip 2D spiral inductor must be placed on the top metal layers, thereby consuming significant routing resources for global interconnects. Moreover, it may need more dedicated shielding to prevent unnecessary coupling, which further increases its occupied area. With the popularity of 2.5D and 3D chip architecture, Through-Silicon-Via (TSV) has been widely used, a significant portion of which are placed for thermal/manufacturability/reliability purposes. Thus, those redundant TSVs can be utilized to form the on-chip inductor for 2.5D/3D chips, with lower footprint and higher inductance density compared from the conventional spiral inductor. Unlike prior works focusing on the inductor itself, this paper discusses the optimization and application of such TSV-inductor from system perspective, including the optimization options and its design considerations. The possible design options including physical parameters, architecture and materials, to optimize the TSV-inductor are thoroughly investigated. Based on that, we further study a few key design scenarios to evaluate the design impact with use of such TSV-inductor and provide the design guidelines for its application in actual system designs.

A Physics-Aware Methodology for Equivalent Circuit Model Extraction of TSV-inductors

Modeling of TSV-based Solenoid Inductors for 3-D Integration

TSV inductor optimization and its design implication

Electrothermal modeling of coaxial through silicon via (TSV) for three-dimensional ICs

On the Efficacy of Through-Silicon-Via Inductors

A derived circuit model for spiral inductors on lossy silicon substrate

Quasi-Static Derived Physically Expressive Circuit Model for Lossy Integrated RF Passives

System-level Design Consideration and Optimization of Through-Silicon-via Inductor.

A Compact Circuit Model of On-Chip Multi-layer Spiral Inductors on Silicon Substrate

Through-silicon-via inductor: Is it real or just a fantasy?

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via

Modeling of a Pair of Annular Through Silicon Vias (TSV)

A Novel Compact Model for On-Chip Vertically-Coiled Spiral Inductors

A Derived Physically Expressive Circuit Model For Integrated Passives In Rfic

Compact Equivalent Circuit Model Of Two-Layer Spiral Inductors

An Equivalent Circuit Model with Current Return Path Effects for On-Chip Interconnect Up to 80 Ghz

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

A Fast Analytical Model for TSV-based Toroidal Inductors

Modeling and optimization of magnetic core TSV-inductor for on-chip DC-DC converter

Modeling of Double-Π Equivalent Circuit for On-Chip Symmetric Spiral Inductors

Electrical–Thermal Cosimulation of Coaxial TSVs with Temperature-Dependent MOS Effect Using Equivalent Circuit Models