Abstract:3D wafer or chip stacking by through-silicon vias (TSVs) has brought the industry close to a breakthrough. For fabricating TSV structure, a serious challenge is the front side chemical mechanical planarization (CMP) process and especially non-uniformity within 300 mm post-CMP wafers. This paper makes thorough investigation into front side CMP by studying material removal rate (MRR) selectivity and non-uniformity (NU) in TSV and corresponding copper/TEOS layer removal. MRR and NU of different layers were measured under different polishing down force and hydrogen peroxide concentration, and removal rate selectivity was calculated and compared. The results showed that down force should be controlled to achieve a high material removal rate while greatly maintaining NU in a low level. Hydrogen peroxide concentration had a very strong influence on MRR and selectivity of copper/TEOS oxide and directly leads to via dishing situation, which influence the non-uniformity. Subsequently, an ideal combination of process parameters were achieved to obtain a good result in terms of low non-uniformity. This was applied to TSV polishing to verify performance and stability, conducted in a marathon test including TSV/copper/TEOS wafers. In order to facilitate the explanation of TSV removal, the synergistic effect of different layers and removal mechanism on TSV CMP were explained. This conform to the experiments, which is of great value to further research about profile control in the TSV CMP process.

Improvement of Via Dishing and Non-Uniformity in TSV Chemical Mechanical Planarization

Non-uniformity and Removal Rate Selectivity Investigations in Through Silicon Via Front Side CMP

Pretreatment to Assure the Copper Filling in Through-Silicon Vias

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

TSV CMP process optimization and dishing defect reduction

Copper Chemical Mechanical Polishing and Wafer Thinning with Temporary Bonding for Through Silicon Via Interconnect

An Efficient and High Quality Chemical Mechanical Polishing Method for Copper Surface in 3D TSV Integration

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

Investigations of Annealing Effect on TSV CMP

Chemical-mechanical planarization aided dimple etching for self alignment

CU seed, CMP process development and via resistance extraction in through silicon via technology

A Research Of The Micro-Damage Of The Backside Tsv Heterogeneous Microstructure After Cmp Process With Alkaline Slurry

The Study of Backside Tsv Reveal Process by Direct Si/Cu Grinding and Polishing

A novel plating bath device for reducing surface copper thickness and improving wafer-scale uniformity

The Behaviors of Alkaline Slurry during the CMP of TSV Backside Heterogeneous Microstructure

The Behaviours of BTA and SDS in the Alkaline Slurry during the Backside CMP of Heterogeneous Microstructure of TSV Wafers

A Wet Etching Approach for the Via-Reveal of a Wafer with Through Silicon Vias

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life

Modeling and Simulation of Cu Tsv Electroplating for Wafer-Level Mems Vacuum Packaging

The Cmp Effect Of Potassium Molybdate With Bta As Compound Corrosion Inhibitor Used In Cmp Of The Tsv Heterogeneous Microstructure

Improvement of a TSV Reveal Process Comprising Direct Si/Cu Grinding and Residual Metal Removal