Abstract:Trench-first-metal-hard-mask (TFMHM) approach has been widely utilized for copper interconnect formation since 45nm CMOS technology node. In TFMHM process integration development, four major challenges have to be solved. The first is the gap-fill due to the small top trench CD and the introduction of metal hard mask; the second is to meet the electrical targets through lower capacitance, lower metal sheet resistance and lower via contact resistance; the third is to meet yield requirement that ensure no short, bridge and open in all the design rule allowed patterns, and eliminate all killer defects; the last is the reliability related issues including metal and via related TDDB, upstream EM and downstream EM. Coupled with the optimization of wet clean process and proper choice of metal hard mask, a smooth and tapered trench profile could be delivered and the gap-fill performance could be greatly improved. The optimization of barrier/seed process coupled with the desired trench profile, via bottom CD and via chamfer profile, the on-target electrical performance could be achieved. The via bottom CD and chamfer profile are also critical to interconnects and etch process parameter optimization is important for defect elimination. With partial SAV process optimization, via related TDDB issue is solved and trench related TDDB is also not a problem for the above gap-fill friendly trench profile. For EM, we found the downstream EM lifetime is improved by gap filling friendly process and proper copper line CD.

Non-uniformity and Removal Rate Selectivity Investigations in Through Silicon Via Front Side CMP

Improvement of Via Dishing and Non-Uniformity in TSV Chemical Mechanical Planarization

Effect of leveler on microstructure and stress of electroplated copper for TSV application

TSV CMP process optimization and dishing defect reduction

Copper Chemical Mechanical Polishing and Wafer Thinning with Temporary Bonding for Through Silicon Via Interconnect

A Research Of The Micro-Damage Of The Backside Tsv Heterogeneous Microstructure After Cmp Process With Alkaline Slurry

The Study of Backside Tsv Reveal Process by Direct Si/Cu Grinding and Polishing

An Efficient and High Quality Chemical Mechanical Polishing Method for Copper Surface in 3D TSV Integration

The Behaviors of Alkaline Slurry during the CMP of TSV Backside Heterogeneous Microstructure

CU seed, CMP process development and via resistance extraction in through silicon via technology

Investigations of Annealing Effect on TSV CMP

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

A Wet Etching Approach for the Via-Reveal of a Wafer with Through Silicon Vias

The Behaviours of BTA and SDS in the Alkaline Slurry during the Backside CMP of Heterogeneous Microstructure of TSV Wafers

Controllable adjustment of Ta and Cu material removal rate in TSV tantalum-based barrier layer planarization process

Improvement of a TSV Reveal Process Comprising Direct Si/Cu Grinding and Residual Metal Removal

A Theoretical Model Incorporating Both the Nano-Scale Material Removal and Wafer Global Uniformity During Planarization Process

Chemical-mechanical planarization aided dimple etching for self alignment

Metal hard-mask based AIO etch challenges and solutions

Fabrication, Characterization, and Simulation of a Low-Cost TSV Integration Without Front-Side CMP Process

Optimization of Design of Experiment for Chemical Mechanical Polishing of A 12-Inch Wafer