Abstract:This work focuses on the effect of Cu protrusion on the reliability of High Bandwidth Memory (HBM) fabricated by wafer-to-wafer hybrid bonding (W2W-HB) process. The thermal stress induced by large coefficient of thermal expansion (CTE) mismatch between different materials could seriously deteriorate the device performance, and even lead to failure. Different manufacturing and service conditions could greatly affect the microstructure and deformation behavior of the through silicon via (TSV). In this paper, a new process was designed to realize the self-compensation of the surface topology by rationally utilizing the dishing defects caused by CMP. The influence of dielectric materials (dielectric layer thickness and CTE) on Cu protrusion height was systematically explored. A finite element analysis (FEA) model was proposed to provide insight into the Cu protrusion mechanism under different operating conditions. Annealing tests were carried out to identify how the microstructure affects protrusion and to verify the accuracy of the model. During the test, the extruded TSV was observed using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Mechanisms of Cu protrusion in TSVs during heat treatment were analyzed, and possible factors involving thermal stress were discussed through the model. In addition, debonding risk was evaluated by comparing the peak interfacial peeling stress and the protrusion height for various scenarios. The conclusions can be used to understand and solve the key issues in the reliability challenges of HBM W2W-HB stacking process by enabling high-throughput TSV fabrication.

A Research Of The Micro-Damage Of The Backside Tsv Heterogeneous Microstructure After Cmp Process With Alkaline Slurry

The Behaviors of Alkaline Slurry during the CMP of TSV Backside Heterogeneous Microstructure

The Behaviours of BTA and SDS in the Alkaline Slurry during the Backside CMP of Heterogeneous Microstructure of TSV Wafers

Effect of leveler on microstructure and stress of electroplated copper for TSV application

The Cmp Effect Of Potassium Molybdate With Bta As Compound Corrosion Inhibitor Used In Cmp Of The Tsv Heterogeneous Microstructure

Non-uniformity and Removal Rate Selectivity Investigations in Through Silicon Via Front Side CMP

Improvement of Via Dishing and Non-Uniformity in TSV Chemical Mechanical Planarization

Copper Chemical Mechanical Polishing and Wafer Thinning with Temporary Bonding for Through Silicon Via Interconnect

TSV CMP process optimization and dishing defect reduction

The Study of Backside Tsv Reveal Process by Direct Si/Cu Grinding and Polishing

Investigations of Annealing Effect on TSV CMP

Effects of Post-Cmp Annealing on TSV Cu Protrusion and Leakage Current

Investigate the Microstructure Changes in Cu Through-Silicon Vias (tsvs) under Thermal Process

Galvanic Corrosion Caused by Device Structure in Chemical Mechanical Planarization

An Efficient and High Quality Chemical Mechanical Polishing Method for Copper Surface in 3D TSV Integration

Opening the Hole of the Backside Silicon and Forming the Alloy Bump For TSVs

The Effect of Inhibitors on the Electrochemical Deposition of Copper Through-silicon Via and its CMP Process Optimization

Optimization of Cu protrusion of wafer-to-wafer hybrid bonding for HBM packages application

Effects of grinding-induced surface topography on the material removal mechanism of silicon chemical mechanical polishing

Chemical-mechanical planarization aided dimple etching for self alignment

Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication