Slurry components in metal chemical mechanical planarization (CMP) process: A review
Dasol Lee,Hyunseop Lee,Haedo Jeong
DOI: https://doi.org/10.1007/s12541-016-0201-y
IF: 2.0411
2016-12-01
International Journal of Precision Engineering and Manufacturing
Abstract:Chemical mechanical planarization (CMP) is a wet polishing technique employed to smooth the surface of various materials using a combination of chemical and mechanical forces to achieve finer and longer lines on semiconductor devices. Among the published papers related to CMP, the CMP metal slurry has been the primary focus, and it appears to be the main driver to improve the CMP performance and quality for next-generation devices. Slurry can affect the removal rate, uniformity, defects, and selectivity between the metal and the barrier layer. The material-removal mechanism of metal CMP is determined by the chemical reaction due to chemical solutions compared to the mechanical action, which is due to the abrasiveness of the slurry. We verify that for each user, a chemical knowledge of slurry is required to obtain preferred results. The basic chemical factors of metal CMP slurry are oxidizers, chelating agents, and corrosion inhibitors. This review focuses on the role and effectiveness of each chemical solution by considering the electrochemical characteristics. It will assist in determining the most appropriate solution to further the development of new slurry for next-generation metal CMP.
engineering, mechanical, manufacturing