Galvanic Corrosion Caused by Device Structure in Chemical Mechanical Planarization

Lei Wang,Guilin Chen,Luping Liu,Xinchun Lu
DOI: https://doi.org/10.1109/cstic55103.2022.9856892
2022-01-01
Abstract:Chemical mechanical planarization (CMP) has emerged as the most viable method to planarize thin films during fabrication of Spin-Transfer Torque-MRAM (STT -MRAM). Some metals when exposed to slurry in CMP process are subject to galvanic corrosion. This paper explores the influence of galvanic corrosion on the thickening of the hard mask oxidation layer at the top of MTJ module.
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