Abstract:Abstract During copper CMP, abrasives and asperities interact with the copper at the nano-scale, partially removing protective films. The local Cu oxidation rate increases, then decays with time as the protective film reforms. In order to estimate the copper removal rate and other Cu-CMP output parameters with a mechanistic model, the passivation kinetics of Cu, i.e. the decay of the oxidation current with time after an abrasive/copper interaction, are needed. For the first time in studying Cu-CMP, microelectrodes were used to reduce interference from capacitive charging, IR drops and low diffusion limited currents, problems typical with traditional macroelectrodes. Electrochemical impedance spectroscopy (EIS) was used to obtain the equivalent circuit elements associated with different electrochemical phenomena (capacitive, kinetics, diffusion etc.) at different polarization potentials. These circuit elements were used to interpret potential-step chronoamperometry results in inhibiting and passivating solutions, notably to distinguish between capacitive charging and Faradaic currents. Chronoamperometry of Cu in acidic aqueous glycine solution containing the corrosion inhibitor benzotriazole (BTA) displayed a very consistent current decay behavior at all potentials, indicating that the rate of current decay was controlled by diffusion of BTA to the surface. In basic aqueous glycine solution, Cu (which undergoes passivation by a mechanism similar to that operating in weakly acidic hydrogen peroxide slurries) displayed similar chronoamperometric behavior for the first second or so at all anodic potentials. Thereafter, the current densities at active potentials settled to values around those expected from polarization curves, whereas the current densities at passive potentials continued to decline. Oxidized Cu species typically formed at ‘active’ potentials were found to cause significant current decay at active potentials and at passive potentials before more protective passive films form. This was established from galvanostatic experiments.

Electrochemical investigation of copper passivation kinetics and its application to low-pressure CMP modeling

RETRACTED: Copper Electrodeposition in Through-Silicon Via under Galvanostatic Condition

Fundamental Mechanisms of Copper CMP – Passivation Kinetics of Copper in CMP Slurry Constituents

Modeling the Copper Electrodeposition of Through-silicon-vias Corresponded to Linear Sweep Voltammetry

Tribo-chemical Behavior of Copper in Chemical Mechanical Planarization

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

Modeling the Chemical-Mechanical Synergy During Copper CMP

Chemical Roles on Cu-slurry Interface During Copper Chemical Mechanical Planarization

Material Removal Mechanism of Copper CMP from a Chemical–Mechanical Synergy Perspective

Experimental and Computational Investigation of Complexing Agents on Copper Dissolution for Chemical Mechanical Polishing Process

Chemical processes in the chemical mechanical polishing of copper

Passivation Kinetics of 1,2,4-Triazole in Copper Chemical Mechanical Polishing

Chemical effects on the tribological behavior during copper chemical mechanical planarization

Chemical Mechanical Planarization of Copper Using Ethylenediamine and Hydrogen Peroxide Based Slurry

Behavior of Copper Removal by CMP and Its Correlation to Deposit Structure and Impurity Content

Investigation of the Behaviors of Various Electroplated Copper Films During CMP

Mechanisms of Chemically Promoted Material Removal Examined for Molybdenum and Copper CMP in Weakly Alkaline Citrate-Based Slurries

Electrochemical Corrosion Behavior and Surface Passivation of Bulk Nanocrystalline Copper in Alkaline Solution

Theoretical Explanation of Passivation Behavior in OFP-Cu and OF-Cu

Tribo-Electrochemical Characterization of Ru, Ta and Cu CMP Systems Using Percarbonate Based Solutions

Electrochemical Corrosion Behavior and Theoretical Simulation of Cobalt in Chemical Mechanical Polishing Process