Abstract:Abstract Copper chemical mechanical polishing (CMP) in barrier layer slurries with periodate as oxidant has not been intensively studied. This work presents an investigation into copper tribocorrosion in potassium periodate-based slurries during CMP. The research focused on copper tribocorrosion behavior, the surface chemical and electrochemical reaction products, and the electrochemical mechanism during CMP. The copper surface film was characterized by Raman spectra experiments. Tribocorrosion tests combined with CMP chemical experiments were conducted to study the tribochemical behavior and wear-accelerated corrosion effect. The results show that copper corrosion is more severe in acid solutions than in alkaline conditions. The copper surface is mainly passivated with copper oxides, copper hydroxide, and copper iodide. Small amounts of copper iodate, copper periodate, and iodine could be detected under specific pH conditions. Abrasion could help to get a uniform passivation film on copper surface consisting of copper oxides, copper hydroxide, and copper iodide only. The material loss due to wear-accelerated corrosion during CMP was also investigated. The results show that under weakly alkaline conditions (pH 9 and pH 10), the wear-corrosion effect plays an important role in the total material loss due to corrosion. The wear-accelerated corrosion is mainly caused by the exposure of more cathodic reaction sites to the slurry for participation in the redox reaction and the local galvanic corrosion during the CMP process. The high wear corrosion proportion of the total corrosion (ΔIc/Icc) could help to obtain a better surface quality and desirable material removal rate during CMP.

Chemical effects on the tribological behavior during copper chemical mechanical planarization

Tribo-chemical Behavior of Copper in Chemical Mechanical Planarization

Chemical Roles on Cu-slurry Interface During Copper Chemical Mechanical Planarization

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

Chemical processes in the chemical mechanical polishing of copper

Material Removal Mechanism of Copper CMP from a Chemical–Mechanical Synergy Perspective

Experimental and Computational Investigation of Complexing Agents on Copper Dissolution for Chemical Mechanical Polishing Process

Investigation of thermal effects in copper chemical mechanical polishing

Effects of corrosion environments on the surface finishing of copper chemical mechanical polishing

Role of the Adhesion Force During Copper Chemical Mechanical Planarization

The Influence of Slurry Containing Polystyrene Particles on Copper Chemical Mechanical Planarization

Copper chemical mechanical polishing using a slurry-free technique

Wear phenomena in chemical mechanical polishing

Tribo-Electrochemical Characterization of Ru, Ta and Cu CMP Systems Using Percarbonate Based Solutions

A review: research progress of chemical–mechanical polishing slurry for copper interconnection of integrated circuits

Mechanisms of Chemically Promoted Material Removal Examined for Molybdenum and Copper CMP in Weakly Alkaline Citrate-Based Slurries

Material removal mechanism of copper chemical mechanical polishing in a periodate-based slurry

Mechanisms of Mixed Corrosion Inhibitors in Copper Chemical Mechanical Polishing

Chemical Mechanical Planarization of Copper Using Ethylenediamine and Hydrogen Peroxide Based Slurry

Chemical mechanical polishing for copper films in integrated circuit wiring layers using an advanced slurry

Investigation of the Behaviors of Various Electroplated Copper Films During CMP