The Influence of Slurry Containing Polystyrene Particles on Copper Chemical Mechanical Planarization

Gong Jianfeng,Pan Guoshun,Dai Yuanjing,Liu Yan
DOI: https://doi.org/10.3969/j.issn.0254-0150.2010.07.001
2010-01-01
Abstract:The application of copper and low-k materials in the manufacture of integrate circuit(IC) creates more challenges in the surface planarization(CMP) process.In order to improve the planarization efficiency of Cu-CMP,the polystyrene(PS) organic particles were utilized as abrasive in the slurry.The influence of oxidant,complex reagent,pH,diameter and the concentration of abrasive on Cu-CMP,and the chemical effects of PS particles in the slurry were analyzed via static erosion and electrochemistry approaches.The results show that when PS particles are used as abrasive,H2O2 and glycine are used as oxidant and complex reagent respectively,a large copper removal rate of 1 μm/min can be achieved.The appearance of PS particles in the slurry enhances the chemical corrosion effect on copper surface.
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