Abstract:Abstract Copper chemical mechanical polishing (CMP) in barrier layer slurries with periodate as oxidant has not been intensively studied. This work presents an investigation into copper tribocorrosion in potassium periodate-based slurries during CMP. The research focused on copper tribocorrosion behavior, the surface chemical and electrochemical reaction products, and the electrochemical mechanism during CMP. The copper surface film was characterized by Raman spectra experiments. Tribocorrosion tests combined with CMP chemical experiments were conducted to study the tribochemical behavior and wear-accelerated corrosion effect. The results show that copper corrosion is more severe in acid solutions than in alkaline conditions. The copper surface is mainly passivated with copper oxides, copper hydroxide, and copper iodide. Small amounts of copper iodate, copper periodate, and iodine could be detected under specific pH conditions. Abrasion could help to get a uniform passivation film on copper surface consisting of copper oxides, copper hydroxide, and copper iodide only. The material loss due to wear-accelerated corrosion during CMP was also investigated. The results show that under weakly alkaline conditions (pH 9 and pH 10), the wear-corrosion effect plays an important role in the total material loss due to corrosion. The wear-accelerated corrosion is mainly caused by the exposure of more cathodic reaction sites to the slurry for participation in the redox reaction and the local galvanic corrosion during the CMP process. The high wear corrosion proportion of the total corrosion (ΔIc/Icc) could help to obtain a better surface quality and desirable material removal rate during CMP.

Behavior of Copper Removal by CMP and Its Correlation to Deposit Structure and Impurity Content

Investigation of the Behaviors of Various Electroplated Copper Films During CMP

A New Copper Electrodeposition Scheme to Reduce Void Defects after Chemical Mechanical Polishing

Tribo-chemical Behavior of Copper in Chemical Mechanical Planarization

A Low Cost and Residue-Free Abrasive-Free Copper Cmp Process with Low Dishing, Erosion and Oxide Loss

Chemical processes in the chemical mechanical polishing of copper

Mechanism for Cu Void Defect on Various Electroplated Film Conditions

Study on the defect of copper CMP

Material Removal Mechanism of Copper CMP from a Chemical–Mechanical Synergy Perspective

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

A quantitative study of removal mechanism of copper polishing based on a single pad-asperity polishing test

Study on Abrasive Effect in Copper Chemical-Mechanical Polishing

Electrochemical Characteristic of Chemical-Mechanical Polishing of Copper with Oxide Passive Film

Investigation on the Material Removal Process of Copper by a Single PAD Asperity

Mechanisms of copper removal during chemical mechanical polishing

Copper chemical mechanical polishing using a slurry-free technique

Corrosion electrochemical mechanism of chemical mechanical polishing of copper in K3Fe(CN)(6) solution

Research on the Planarity in the Copper Chemical Mechanical Polishing Process

Chemical effects on the tribological behavior during copper chemical mechanical planarization

Effect of Impurity Distribution on Corrosion Behavior of Electrodeposited Copper in H[sub 2]O[sub 2]-Based Slurry