Abstract:Abstract Copper chemical mechanical polishing (CMP) in barrier layer slurries with periodate as oxidant has not been intensively studied. This work presents an investigation into copper tribocorrosion in potassium periodate-based slurries during CMP. The research focused on copper tribocorrosion behavior, the surface chemical and electrochemical reaction products, and the electrochemical mechanism during CMP. The copper surface film was characterized by Raman spectra experiments. Tribocorrosion tests combined with CMP chemical experiments were conducted to study the tribochemical behavior and wear-accelerated corrosion effect. The results show that copper corrosion is more severe in acid solutions than in alkaline conditions. The copper surface is mainly passivated with copper oxides, copper hydroxide, and copper iodide. Small amounts of copper iodate, copper periodate, and iodine could be detected under specific pH conditions. Abrasion could help to get a uniform passivation film on copper surface consisting of copper oxides, copper hydroxide, and copper iodide only. The material loss due to wear-accelerated corrosion during CMP was also investigated. The results show that under weakly alkaline conditions (pH 9 and pH 10), the wear-corrosion effect plays an important role in the total material loss due to corrosion. The wear-accelerated corrosion is mainly caused by the exposure of more cathodic reaction sites to the slurry for participation in the redox reaction and the local galvanic corrosion during the CMP process. The high wear corrosion proportion of the total corrosion (ΔIc/Icc) could help to obtain a better surface quality and desirable material removal rate during CMP.

Mechanism for Cu Void Defect on Various Electroplated Film Conditions

Investigation of the Behaviors of Various Electroplated Copper Films During CMP

Behavior of Copper Removal by CMP and Its Correlation to Deposit Structure and Impurity Content

Void Defect Reduction after Chemical Mechanical Planarization of Trenches Filled by Direct/Pulse Plating

A New Copper Electrodeposition Scheme to Reduce Void Defects after Chemical Mechanical Polishing

Direct copper plating on ultra-thin sputtered cobalt film in an alkaline bath

Defectivity Characterization of post-CMP Voiding in 32nm Cu Metallization

Study of the Formation of Copper Void Defect and Process Optimization For Reduction In Dual Damascene Process

Effect of Cu Film Thickness on Cu Bonding Quality and Bonding Mechanism

A Low Cost and Residue-Free Abrasive-Free Copper Cmp Process with Low Dishing, Erosion and Oxide Loss

Chemical processes in the chemical mechanical polishing of copper

Defect Law of Cu/Co Patterned Wafers After Using a Novel Bulk/Barrier Slurry and Cleaning Solution

Copper chemical mechanical polishing using a slurry-free technique

Tribo-chemical Behavior of Copper in Chemical Mechanical Planarization

Initial surface roughness of electrochemical plating copper under different conditions

Influence of plating parameters and solution chemistry on the voiding propensity at electroplated copper–solder interface

Micro-scratches generation mechanism by copper oxides adhered on silica abrasive in copper chemical mechanical polishing

Mechanisms of copper removal during chemical mechanical polishing

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

Improved Electrochemical Plating for Void-Free Copper Line in ULSI Interconnect

TSV Cu Plating and Implications for CMP