Abstract:Electrochemical behaviors of the base electrolyte containing different additives were investigated by galvanostatic potential transient measurements (GM), cyclic voltammetry tests (CV) and potentiostatic measurements. Copper deposits on sputtering copper seed from physical vapor deposition (PVD) were examined by a scanning electron microscope and X-ray diffraction spectra. Cross sections of copper pillars and fine line patterns were observed by metallographic microscope. GM result revealed ethylene oxide-propylene oxide co-polymer (EO/PO) performed a further inhibition on copper deposition in the presence of 60ppm chloride ions as the increment of EO/PO concentration. GM, CV and potentiostatic results indicated that copper deposition was accelerated by synergetic effects of additives in the base electrolyte containing 60ppm chloride ions, 20mg/L EO/PO and 0.7mg/L bis-(sodium sulfopropyl)-disulﬁde. Sputtering PVD copper seed with even deposit surface was recommended to form the uniformity of copper deposition through increasing the growing density of copper particles. Oscillatory was employed to form uniform distribution of copper deposits in thickness. Copper grain growth was preferentially [111] textured. Bottom-up copper pillars and fine line patterns with plating uniformity were fabricated to meet the requirement of an accurate impedance and the high density interconnection for IC substrates.

A New Copper Electrodeposition Scheme to Reduce Void Defects after Chemical Mechanical Polishing

Void Defect Reduction after Chemical Mechanical Planarization of Trenches Filled by Direct/Pulse Plating

Behavior of Copper Removal by CMP and Its Correlation to Deposit Structure and Impurity Content

A Low Cost and Residue-Free Abrasive-Free Copper Cmp Process with Low Dishing, Erosion and Oxide Loss

Investigation of the Behaviors of Various Electroplated Copper Films During CMP

Copper chemical mechanical polishing using a slurry-free technique

Elimination the CMP Defects for TSV Process by Optimizing the Copper Electrodeposition

Chemical processes in the chemical mechanical polishing of copper

Mechanism for Cu Void Defect on Various Electroplated Film Conditions

Two-Step Electrochemical Mechanical Polishing of Pure Copper

Study of the Formation of Copper Void Defect and Process Optimization For Reduction In Dual Damascene Process

Plating Uniformity of Bottom-Up Copper Pillars and Patterns for Ic Substrates with Additive-Assisted Electrodeposition

Tribo-chemical Behavior of Copper in Chemical Mechanical Planarization

Electrochemical Mechanical Polishing of Copper with High Permittivity Abrasives

An Efficient and High Quality Chemical Mechanical Polishing Method for Copper Surface in 3D TSV Integration

Frequency Effect of Pulse Plating on the Uniformity of Copper Deposition in Plated Through Holes

Study on the defect of copper CMP

Studies of polixetonium chloride as a novel, hypotoxic and single additive of copper electronic plating for microvia void-free filling in printed circuit board application

Investigation on Flatness and Surface Integrity of Pure Copper Processed by Electrochemical Mechanical Polishing

Newly Designed Colloidal Silica for Copper Chemical Mechanical Polishing in Electronic Packaging

Interactive Effects of Additives and Electrolyte Flow Rate on the Microstructure of Electrodeposited Copper Foils