Abstract:Cobalt (Co), with its low resistivity, superior adhesion property, and void-free seamless fill ability, is being considered by the industry as a promising candidate to replace the conventional tungsten contact plugs for middle-of-the-line and the wiring metal copper interconnects for back-end-of-the-line. Chemical mechanical polishing (CMP), whose demand is greatly increasing as device dimensions shrink to 7-nm node, has been recognized as one of the indispensable manufacturing approaches for the fabrication of multilevel metal interconnection structures. In addition to meeting the appropriate removal rates and removal selection of heterogeneous materials, excellent wafer surface quality and minimized residual particles, also have become the criteria in the developing process of CMP slurries for Co interconnects. This work investigates the optimization process of the final CMP step for Co interconnects by introducing surfactants in hydrogen peroxide based slurries. Various types of surfactants having different functional groups were employed and compared thoroughly by material removal rates (MRRs) and selectivity. The chemical and mechanical mechanisms of various surfactants during CMP process have been clearly revealed by various approaches, including polishing and static etching experiments, electrochemical analysis, tests of absolute zeta potentials, and particle sizes, as well as wafer surface energy measurements. Research results show that Co MRRs are directly correlated with functional groups of various surfactants. Moreover, absolute zeta potentials of abrasive particles can be deeply influenced by different types of surfactants, where the correlation between absolute zeta potentials and Co MRRs presents strong negative. On the other hand, direct positive correlation between oxide MRRs and particle sizes affected by corresponding surfactants can be summarized. Meanwhile, no obvious corresponding relationship between contact angles and MRRs was found, indicating MRRs were barely affected by wettability of wafer surfaces. At last, the selected surfactants were applied to 12-inch wafers for verification, including MRRs, removal selectivity, defects and surface roughness. Each of these surfactants could make Co and TEOS surface Ra maintain at around below 0.7 nm and 0.3 nm, with a number of residual particles lower than 600 particle/wafer.

Defect Law of Cu/Co Patterned Wafers After Using a Novel Bulk/Barrier Slurry and Cleaning Solution

Slurry System Establishment and Optimization for Advanced Cobalt Interconnect Metallization

Research on Weakly Alkaline Bulk Slurries Relevant to Chemical Mechanical Polishing for Cobalt Interconnects

A Low Cost and Residue-Free Abrasive-Free Copper Cmp Process with Low Dishing, Erosion and Oxide Loss

Chemical Mechanical Polishing of Inlaid Copper Structures with Ru/Ta/TaN As Barrier/Liner Layer

Behavior of Copper Removal by CMP and Its Correlation to Deposit Structure and Impurity Content

Electrochemical Corrosion Behavior and Theoretical Simulation of Cobalt in Chemical Mechanical Polishing Process

Study on CMP of Copper Interconnect with Novel Mo-Based Diffusion Barriers

Investigation of the Behaviors of Various Electroplated Copper Films During CMP

Polishing mechanisms of various surfactants in chemical mechanical polishing relevant to cobalt interconnects

Copper chemical mechanical polishing using a slurry-free technique

Developing an Efficient Forward Design Method for Co Post-CMP Cleaning Formulations Based on Nanoparticle Removal Mechanisms

Research on Improvement of CMP Thickness Uniformity Control on Wafer Edge Defocus Defects

Mechanism for Cu Void Defect on Various Electroplated Film Conditions

A Comprehensive study of reliability improvement for 65nm Cu/Low-k process

The Role of Dipotassium Ethylenediaminetetraacetic Acid and Potassium Oleate on Chemical Mechanical Planarization Relevant to Heterogeneous Materials of Cobalt Interconnects

Investigation Of Tungsten Rich Residue Defects Induced By Electron Beam Inspection Post Contact Tungsten Chemical And Mechanical Polish

Chemical mechanical polishing for copper films in integrated circuit wiring layers using an advanced slurry

Effect of Corrosion Inhibitor and Non-ionic Surfactant on CMP of Cu/Co Barrier Stack

A New Copper Electrodeposition Scheme to Reduce Void Defects after Chemical Mechanical Polishing

Experimental and Computational Investigation of Complexing Agents on Copper Dissolution for Chemical Mechanical Polishing Process