Abstract:With the development of ultra-large scale integrated circuits, ruthenium has been used as one of the most promising barrier materials for copper interconnects by replacing the conventional Ta/TaN bilayer film. However, during the polishing process of Ru/Cu structure using KIO4 slurries, the galvanic corrosion of copper could happen due to the large difference of the corrosion potentials between ruthenium and copper. This paper investigates the galvanic corrosion of copper of the Ru/Cu galvanic couple in KIO4-based slurries. The results reveal that, in KIO4 slurries without the addition of effective inhibitors, the galvanic corrosion of copper can greatly accelerate the oxidation and the corrosion of copper, and as a result, more reaction products, such as Cu(IO4)2/Cu(IO3)2 and CuO, can be rapidly formed on the copper surface, by which the material removal rate (MRR) of copper increases and the defects of copper could be aggravated. According to the theory of galvanic corrosion, two types of methods for controlling the galvanic corrosion of copper are proposed, i.e. the 1st one is using other oxidizer instead and the 2nd one is adding appropriate inhibitors. For the 1st method, KIO3 is used for demonstration and the effectiveness is verified. For the 2nd method, the combination of benzotriazole (BTA) and a non-ionic surfactant is tested. With the addition of BTA and the non-ionic surfactant, the theoretical galvanic current density decreases by one order of magnitude, and the MRR of copper slightly decreases after copper is connected to ruthenium to form a Ru/Cu galvanic couple. The passivation mechanism of BTA and the non-ionic surfactant on the copper surface can be proposed as follows: firstly the added BTA can form hydrophobic Cu-BTA complex on the copper surface; then the hydrophobic polypropylene oxide segments of the non-ionic surfactant can be effectively absorbed on the hydrophobic Cu-BTA complex as a supplement. These two parts are integrated as a complete passivating film on the copper surface to protect it from corrosion and excessive mechanical abrasion.

Chemical Mechanical Polishing of Inlaid Copper Structures with Ru/Ta/TaN As Barrier/Liner Layer

Barrier And Low K Polish With A Novel Alkaline Barrier Slurry Combining With Fa/O Chelating Agent

Tribo-Electrochemical Characterization of Ru, Ta and Cu CMP Systems Using Percarbonate Based Solutions

Chemical processes in the chemical mechanical polishing of copper

Ruthenium Barrier/Seed Layer for Cu/Low-κ Metallization

Defect Law of Cu/Co Patterned Wafers After Using a Novel Bulk/Barrier Slurry and Cleaning Solution

Chemical mechanical polishing for copper films in integrated circuit wiring layers using an advanced slurry

Achieving equivalent removal of Ta and Ru via controlling oxidation for chemical mechanical polishing of advanced barrier layer

Galvanic Corrosion Inhibitors for Cu/Ru Couple During Chemical Mechanical Polishing of Ru

Study on CMP of Copper Interconnect with Novel Mo-Based Diffusion Barriers

Tribo-chemical Behavior of Copper in Chemical Mechanical Planarization

Copper chemical mechanical polishing using a slurry-free technique

Control of Cu morphology on TaN barrier and combined Ru-TaN barrier/liner substrates for nanoscale interconnects from atomistic kinetic Monte Carlo simulations

Mechanisms of copper removal during chemical mechanical polishing

Slurry System Establishment and Optimization for Advanced Cobalt Interconnect Metallization

Ruthenium and Copper CMP in periodate-based slurry with BTA and K2MoO4 as compound corrosion inhibitors

Controllable adjustment of Ta and Cu material removal rate in TSV tantalum-based barrier layer planarization process

Surface Characteristics of Ruthenium in Periodate-Based Slurry During Chemical Mechanical Polishing

Investigation on the Galvanic Corrosion of Copper During Chemical Mechanical Polishing of Ruthenium Barrier Layer

Electrochemical Corrosion Behavior and Theoretical Simulation of Cobalt in Chemical Mechanical Polishing Process

Behavior of Copper Removal by CMP and Its Correlation to Deposit Structure and Impurity Content