Abstract:As integrated circuit (IC) technology continues to advance, the challenge to extend Moore's law without sacrificing power density and energy efficiency is critical. One method of achieving these goals is through the utilization of Chemical Mechanical Planarization (CMP) to achieve surface planarity down to angstrom level uniformity. Current IC architecture relies on the integration of Cu wiring into Si (i.e., TEOS) substrates to provide effective power transfer. However, this traditional design is limited in efficiency for smaller, high-powered devices which require increased insulating properties. To combat these limitations, low resistivity metals (i.e., Ta, TaN, Mo, etc.) are incorporated for their inherent resistance to electromigration. More specifically, Mo has become increasing attractive due to the metal's thermal stability and compatibility with Cu to serve as an efficient diffusive barrier. These ideal characteristics ultimately lead to the challenge of increased hardness resulting from inherent inert properties leading to the inhibition of effective CMP processes. To overcome this challenge, Mo-CMP involves the use of harsh polishing conditions consisting of high pressure-velocity coupled with complex slurry dispersions containing aggressive redox chemistry (i.e., KMnO 4 ,KIO 3 ,APS, etc.) and high abrasive nanoparticle content (i.e., Al 2 O 3 , SiO 2 , etc.). More specifically, the utilization of harsh oxidizers and alkaline conditions results in a metal oxide film ideal for effective material removal rate (MRR). However, it is with the implementation of these conditions that ultimately results in the generation of surface defects (i.e. scratching, pitting, etching, organic residues, galvanic corrosion, etc.) which are detrimental to the performance (i.e., power efficiency, operating frequency, etc.) for next generation IC devices. This work will focus on the investigation into conditions leading to effective MRR in Mo-CMP. More specifically, this work will utilize a suite of dynamic analytical techniques (i.e. atomic force microscopy, scanning electron microscopy, quartz crystal microbalance, contact angle, electrochemical analysis, etc.) to evaluate interfacial reaction mechanisms that lead to the productive modification for the reduction of shear force during polishing. It has been shown that the incorporation of tailored chemistries and the addition of "softer" passivating agents (i.e., polyamines) can result in the formation of surface-active complexes that trigger rapid interfacial redox reactions in H 2 O 2 environments at a more amenable pH. Increasing the chemistry's surface activity to Mo will result in a decreased Ea limiting the effects of nanoparticle adsorption to reduce CMP induced defectivity without the expense of corrosion events necessary for MRR. Furthermore, the implementation of "softer" passivating agents can reduce the galvanic corrosion effects with Cu which significantly reduce secondary defectivity.

Study on CMP of Copper Interconnect with Novel Mo-Based Diffusion Barriers

Slurry System Establishment and Optimization for Advanced Cobalt Interconnect Metallization

Study of A Single Layer Ultrathin Como Film As A Direct Plateable Adhesion/Barrier Layer for Next Generation Interconnect

Properties of Directly Electroplated Copper on CoMo Alloy Diffusion Barrier

Direct copper electrodeposition on novel CoMo diffusion barrier

Topological Metal MoP Nanowire for Interconnect

Reliability Studies of Barrier Layers for Cu/PAE Low-K Interconnects.

Electrochemical Corrosion Behavior and Theoretical Simulation of Cobalt in Chemical Mechanical Polishing Process

The Thermal and Electrical Properties of CoMo Alloys As Copper Adhesion/barrier Layers

Interface Reliability and Diffusion Barrier Property of Co-W Barrier Layer with Modulated Structure

A Low Cost and Residue-Free Abrasive-Free Copper Cmp Process with Low Dishing, Erosion and Oxide Loss

Chemical Mechanical Polishing of Inlaid Copper Structures with Ru/Ta/TaN As Barrier/Liner Layer

Defect Law of Cu/Co Patterned Wafers After Using a Novel Bulk/Barrier Slurry and Cleaning Solution

Interficial Stability of Cu/Cu(Ru)/Si Contact System for Barrier-Free Copper Metallization

Effect of Corrosion Inhibitor and Non-ionic Surfactant on CMP of Cu/Co Barrier Stack

Study on Effective Methods and Mechanism of Inhibiting Cobalt Removal Rate in Chemical Mechanical Polishing of GLSI Low-Tech Node Copper Film

Evaluation and Mechanism Study of a Novel Green Chemical Mechanical Polishing Slurry for Cobalt Interconnects

Tribo-Electrochemical Characterization of Ru, Ta and Cu CMP Systems Using Percarbonate Based Solutions

Development of Slurry Formulations for Molybdenum-Chemical Mechanical Planarization (Mo-CMP)

Fabrication of Potential NiMoP Diffusion Barrier/seed Layers for Cu Interconnects Via Electroless Deposition

The Oxygen Barrier Properties of CoxMoy Diffusion Barrier for Cu Interconnect