The Oxygen Barrier Properties of CoxMoy Diffusion Barrier for Cu Interconnect

Li-Ao Cao,Xin-Ping Qu
DOI: https://doi.org/10.1109/iitc-amc.2016.7507719
2016-01-01
Abstract:In this work, oxygen barrier properties of a promising single layer diffusion barrier CoxMoy for copper interconnect has been investigated. Sandwich structures of barrier/Cu/barrier were fabricated to modulate the damascene structure. The samples were oxidized by thermal annealing in air at 200–300°C for 1min to 1h. Sheet resistance, optical microscopy, SEM, XRD and XPS were used to characterize the oxidation behavior of the sandwich structure and the barrier itself. Results show that, with more Mo content, the anti-oxidation property of CoMo is better. The Co1Mo3 barrier has best oxygen barrier property: it can protect Cu from oxidizing after 300°C/30 min annealing in air and the barrier film itself has low oxygen content.
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