Abstract:The performance of electronic and spintronic devices based on two-dimensional semiconductors (2D SC) is largely dependent on the quality and resistance of the metal/SC electrical contacts, as well as preservation of the intrinsic properties of the SC channel. Direct Metal/SC interaction results in highly resistive contacts due to formation of large Schottky barriers and considerably affects the properties of the 2D SC. In this work, we address these two important issues in monolayer $\mathrm{MoSe_2}$ Field-Effect transistors (FETs). We encapsulate the $\mathrm{MoSe_2}$ channel with hexagonal Boron Nitride (h-BN), using bilayer h-BN at the metal/SC interface. The bilayer h-BN eliminates the metal/$\mathrm{MoSe_2}$ chemical interactions, preserves the electrical properties of $\mathrm{MoSe_2}$ and reduces the contact resistances by prevention of Fermi-level pinning. We investigate electrical transport in the monolayer $\mathrm{MoSe_2}$ FETs that yields close to intrinsic electron mobilities ($\approx 26\ \mathrm{cm^2 V^{-1} s^{-1}}$) even at room temperature. Moreover, we experimentally study the charge transport through Metal/h-BN/$\mathrm{MoSe_2}$ tunnel contacts and we explicitly show that the dielectric bilayer of h-BN provides highly efficient gating (tuning the Fermi energy) of the $\mathrm{MoSe_2}$ channel at the contact regions even with small biases. Also we provide a theoretical model that allows to understand and reproduce the experimental $I-V$ characteristics of the contacts. These observations give an insight into the electrical behavior of the metal/h-BN/2D SC heterostructure and introduce bilayer h-BN as a suitable choice for high quality tunneling contacts that allows for low energy charge and spin transport.

Two-Dimensional h-BN and MoS2 as Diffusion Barriers for Ultra-Scaled Copper Interconnects

Studies of two-dimensional h-BN and MoS2 for potential diffusion barrier application in copper interconnect technology

Diffusion Barrier Prediction of Graphene and Boron Nitride for Copper Interconnects by Deep Learning

Towards 3-D Carbon-Based Heterogeneous Interconnects

Analysis of Cu-Graphene Interconnects

Opportunities and Challenges of 2D Materials in Back-End-of-line Interconnect Scaling

Topological Metal MoP Nanowire for Interconnect

Recent Advances in Barrier Layer of Cu Interconnects

Reliability Studies of Barrier Layers for Cu/PAE Low-K Interconnects.

Amorphous Boron Nitride as an Ultrathin Copper Diffusion Barrier for Advanced Interconnects

Studies of two-dimensional MoS2 on enhancing the electrical performance of ultrathin copper films

Unleashing the Power of 2D MoS2: in Situ TEM Study of Its Potential As Diffusion Barriers in Ru Interconnects.

First-principles investigation of copper diffusion barrier performance in defective 2D layered materials*

Hexagonal boron nitride intercalated multi-layer graphene: A possible ultimate solution to ultra-scaled interconnect technology

Bilayer h-BN Barriers for Tunneling Contacts in Fully-Encapsulated Monolayer $\mathbf{MoSe_2}$ Field-Effect Transistors

Ultrathin graphene and graphene oxide layers as a diffusion barrier for advanced Cu metallization

Toward barrier free contact to MoSe2/WSe2 heterojunctions using two-dimensional metal electrodes

CVD barriers for Cu with nanoporous ultra low-k: integration and reliability

Development of Diffusion Barrier for Cu Interconnection in ULSI

3D Nanocarbon Interconnects

Enhanced Electron Transport in Thin Copper Films via Atomic-Layer Materials Capping