Abstract:Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor (TFET) is considered as one of the most promising low-power devices that can simultane-ously obtain low off-state current (IOFF), high on-state current (ION) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabri-cating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the defor-mation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS2/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS2 film with the relatively high crystal quality is confirmed by atomic force microscopy (AFM), scanning electron microscopy (SEM), and Raman characterizations. Besides, the prominent negative differential resistance (NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS2/Si heterojunction. The bilayer MoS2/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.

Unleashing the Power of 2D MoS2: in Situ TEM Study of Its Potential As Diffusion Barriers in Ru Interconnects.

Unleashing the Power of 2D MoS 2 : In Situ TEM Study of Its Potential as Diffusion Barriers in Ru Interconnects

Studies of two-dimensional MoS2 on enhancing the electrical performance of ultrathin copper films

Studies of two-dimensional h-BN and MoS2 for potential diffusion barrier application in copper interconnect technology

MoS 2 as an Effective Cu Diffusion Barrier with a Back-End Compatible Process

MoS2/Si Tunnel Diodes Based on Comprehensive Transfer Technique

Influence of MoS 2 -metal interface on charge injection: a comparison between various metal contacts

Two-Dimensional h-BN and MoS2 as Diffusion Barriers for Ultra-Scaled Copper Interconnects

MoS2 Transistor with Weak Fermi Level Pinning via MXene Contacts

Investigation of Interface Interactions Between Monolayer MoS 2 and Metals: Implications on Strain and Surface Roughness

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Towards Barrier Free Contact to MoS2 Using Graphene Electrodes

Investigating Metal Dopants for Lowering the Contact Resistance of Top Gold Contacted Monolayer MoS2

Study on the Resistance Distribution at the Contact Between Molybdenum Disulfide and Metals.

The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces

Utilizing H2S to Sulfurize Transition Metal and Oxide Barriers for Suppressing Resistivity Scaling of Ruthenium Metallization

Femtosecond Laser Irradiation-Mediated MoS2-Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors.

Spin-dependent transport properties of Fe3O4/MoS2/Fe3O4 junctions

Nanoscale Adhesion and Material Transfer at 2D MoS 2 -MoS 2 Interfaces Elucidated by In Situ Transmission Electron Microscopy and Atomistic Simulations

Two-dimensional electronic transport and surface electron accumulation in MoS2

Metal Contacts On Physical Vapor Deposited Monolayer Mos