Epitaxy of Wafer-Scale Single-Crystal MoS2 Monolayer Via Buffer Layer Control
Lu Li,Qinqin Wang,Fanfan Wu,Qiaoling Xu,Jinpeng Tian,Zhiheng Huang,Qinghe Wang,Xuan Zhao,Qinghua Zhang,Qinkai Fan,Xiuzhen Li,Yalin Peng,Yangkun Zhang,Kunshan Ji,Aomiao Zhi,Huacong Sun,Mingtong Zhu,Jundong Zhu,Nianpeng Lu,Ying Lu,Shuopei Wang,Xuedong Bai,Yang Xu,Wei Yang,Na Li,Dongxia Shi,Lede Xian,Kaihui Liu,Luojun Du,Guangyu Zhang
DOI: https://doi.org/10.1038/s41467-024-46170-6
IF: 16.6
2024-01-01
Nature Communications
Abstract:Monolayer molybdenum disulfide (MoS2), an emergent two-dimensional (2D) semiconductor, holds great promise for transcending the fundamental limits of silicon electronics and continue the downscaling of field-effect transistors. To realize its full potential and high-end applications, controlled synthesis of wafer-scale monolayer MoS2 single crystals on general commercial substrates is highly desired yet challenging. Here, we demonstrate the successful epitaxial growth of 2-inch single-crystal MoS2 monolayers on industry-compatible substrates of c-plane sapphire by engineering the formation of a specific interfacial reconstructed layer through the S/MoO3 precursor ratio control. The unidirectional alignment and seamless stitching of MoS2 domains across the entire wafer are demonstrated through cross-dimensional characterizations ranging from atomic- to centimeter-scale. The epitaxial monolayer MoS2 single crystal shows good wafer-scale uniformity and state-of-the-art quality, as evidenced from the ~100% phonon circular dichroism, exciton valley polarization of ~70%, room-temperature mobility of ~140 cm2v-1s-1, and on/off ratio of ~109. Our work provides a simple strategy to produce wafer-scale single-crystal 2D semiconductors on commercial insulator substrates, paving the way towards the further extension of Moore's law and industrial applications of 2D electronic circuits.