3D Nanocarbon Interconnects

Changjian Zhou,Cary Y. Yang

DOI: https://doi.org/10.1109/ICSICT49897.2020.9278240

2020-01-01

Abstract:Continuous downward scaling in silicon integrated circuit technology into the sub-20 nm regime has created critical challenges in chip manufacturing, among them, reliability and performance of on-chip interconnects. Current interconnect materials, Cu and W, face increased reliability challenges in the nanoscale as a result of electromigration failures at high current densities. Materials such as nanocarbons, metal silicides, cobalt, ruthenium, and metallic nanowires are being considered as potential replacements for Cu and W. In particular, due to its superior electrical and mechanical properties as well as much higher current-carrying capacities, carbon nanotube (CNT) has been demonstrated to be a serious contender in on-chip interconnect vias. However, the main challenge to functionalizing CNT vias is the metal-CNT contact resistance. To mitigate such challenge, a seamless three-dimensional all-carbon interconnect structure is conceived and fabricated by growing CNTs directly on one or few layers of graphene (MLG). This 3D structure can potentially yield low resistance due to the strong C-C sp <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> bonding in CNT and graphene and across the CNT-graphene interface. While such growth has been demonstrated, the CNT/graphene interfacial nanostructure and how it impacts the electrical properties of the 3D structure are far from being understood.