Abstract:The barrier layer in Cu technology is essential to prevent Cu from diffusing into the dielectric layer at high temperatures; therefore, it must have a high stability and good adhesion to both Cu and the dielectric layer. In the past three decades, tantalum/tantalum nitride (Ta/TaN) has been widely used as an inter-layer to separate the dielectric layer and the Cu. However, to fulfill the demand for continuous down-scaling of the Cu technology node, traditional materials and technical processes are being challenged. Direct electrochemical deposition of Cu on top of Ta/TaN is not realistic, due to its high resistivity. Therefore, pre-deposition of a Cu seed layer by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is necessary, but the non-uniformity of the Cu seed layer has a devastating effect on the defect-free fill of modern sub-20 or even sub-10 nm Cu technology nodes. New Cu diffusion barrier materials having ultra-thin size, high resistivity and stability are needed for the successful super-fill of trenches at the nanometer scale. In this review, we briefly summarize recent advances in the development of Cu diffusion-proof materials, including metals, metal alloys, self-assembled molecular layers (SAMs), two-dimensional (2D) materials and high-entropy alloys (HEAs). Also, challenges are highlighted and future research directions are suggested.

Recent Advances in Barrier Layer of Cu Interconnects

Reliability Studies of Barrier Layers for Cu/PAE Low-K Interconnects.

Fabrication and Diffusion Barrier Properties of Nanoscale Ta/Ta-N Bi-Layer

Diffusion Barrier Behaviors of V-Ta, V-Ta-N and V-Ta/V-Ta-N Alloy Films in Cu Interconnects

Selective Barrier for Cu Interconnect Extension in 3nm Node and Beyond

CVD barriers for Cu with nanoporous ultra low-k: integration and reliability

Development of Diffusion Barrier for Cu Interconnection in ULSI

Copper interconnections and growth of diffusion barrier in integrated circuit fabrication

Improved Barrier Properties of Ultrathin Ru Film with Tan Interlayer for Copper Metallization

Studies of two-dimensional h-BN and MoS2 for potential diffusion barrier application in copper interconnect technology

Comparison of Ru/Ta and Ru/TaN as Barrier Stack for Copper Metallization

Ultrathin Diffusion Barriers/Liners for Gigascale Copper Metallization

Diffusion Barrier of Cu Metallization in ULSI

Voidless metal filling and elimination of metal diffusion in PVD barrier and seed process for high performance Cu interconnect

Barrier Layer Thickness Analysis for Reliable Copper Plug Process in CMOS Technology.

Stability and Microstructure Characterization of Barrierless Cu (sn, C) Films

Multilayered Metal Capping Barrier Including Cusin, for Sub-65-Nm Technology Nodes

Interficial Stability of Cu/Cu(Ru)/Si Contact System for Barrier-Free Copper Metallization

Ultra-Thin Ru/TaN Bi-Layer as Diffusion Barrier to Seedless Copper Interconnect

Design and Fabrication of Ultrathin and Highly Thermal-Stable Α-Ta/graded Ta(N)/TaN Multilayer As Diffusion Barrier for Cu Interconnects

Study on Ta(N) Ultrathin Metal Diffusion Barrier Layer in Integrated Circuits