Abstract:Abstract Silicon interposers embedded with ultra-deep through-silicon vias (TSVs) are in great demand for the heterogeneous integration and packaging of opto-electronic chiplets and microelectromechanical systems (MEMS) devices. Considering the cost-effective and reliable manufacturing of ultra-deep TSVs, the formation of continuous barrier and seed layers remains a crucial challenge to solve. Herein, we present a novel dual catalysis-based electroless plating (ELP) technique by tailoring polyimide (PI) liner surfaces to fabricate dense combined Ni barrier/seed layers in ultra-deep TSVs. In additional to the conventional acid catalysis procedure, a prior catalytic step in an alkaline environment is proposed to hydrolyze the PI surface into a polyamide acid (PAA) interfacial layer, resulting in additional catalysts and the formation of a dense Ni layer that can function as both a barrier layer and a seed layer, particularly at the bottom of the deep TSV. TSVs with depths larger than 500 μm and no voids are successfully fabricated in this study. The fabrication process involves low costs and temperatures. For a fabricated 530-μm-deep TSV with a diameter of 70 μm, the measured depletion capacitance and leakage current are approximately 1.3 pF and 1.7 pA at 20 V, respectively, indicating good electrical properties. The proposed fabrication strategy can provide a cost-effective and feasible solution to the challenge of manufacturing ultra-deep TSVs for modern 3D heterogeneous integration and packaging applications.

Voidless metal filling and elimination of metal diffusion in PVD barrier and seed process for high performance Cu interconnect

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Wetting Process of Copper Filling in Through Silicon Vias

Influence of Electroplating Current Density on Through Silicon Via Filling

Recent Advances in Barrier Layer of Cu Interconnects

Reliability Studies of Barrier Layers for Cu/PAE Low-K Interconnects.

CU seed, CMP process development and via resistance extraction in through silicon via technology

Study of the Formation of Copper Void Defect and Process Optimization For Reduction In Dual Damascene Process

Effective Approach for TSV Cu Plating Gap Fill Improvement

A Comprehensive study of reliability improvement for 65nm Cu/Low-k process

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Metal hard-mask based AIO etch challenges and solutions

Improved Electrochemical Plating for Void-Free Copper Line in ULSI Interconnect

Fast copper plating process for TSV fill

Sub-Micron Electrical Interconnection Enabled Ultra-High I/O Density Wafer Level SiP Integration

Study of ultrathin vanadium nitride as diffusion barrier for copper interconnect

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

Novel Copper Filling Methods for 2 Μm × 20 Μm TSVs with an Electroless Deposited Co or Atomic Layer Deposited Ru Seed Layer

Cu electroplating chemistry and process enabling rapid TSV filling with long bath life