Study of ultrathin vanadium nitride as diffusion barrier for copper interconnect

Xin-Ping Qu,Mi Zhou,Tao Chen,Qi Xie,Guo-Ping Ru,Bing-Zong Li
DOI: https://doi.org/10.1016/j.mee.2005.08.009
IF: 2.3
2006-01-01
Microelectronic Engineering
Abstract:Ultrathin Vanadium nitride (VN) thin film with thickness around 10nm was studied as diffusion barrier between copper and SiO"2 or Si substrate. The VN film was prepared by reactive ion beam sputtering. X-ray diffraction, Auger electron spectroscopy, scanning electron microscopy and current-voltage (I-V) technique were applied to characterize the diffusion barrier properties for VN in Cu/VN/Si and Cu/VN/SiO"2 structures. The as-deposited VN film was amorphous and could be thermal stable up to 800^oC annealing. Multiple results show that the ultrathin VN film has good diffusion barrier properties for copper.
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