Abstract:Thin film metallic glass (TFMG) has demonstrated significant potential for applications in the semiconductor industry. In this work, fully amorphous Mo-Co-B thin films with a smooth surface and dense microstructure were prepared through magnetron sputtering. The thermal stability and diffusion barrier performance of the Mo-based TFMG were evaluated through vacuum annealing at temperatures ranging from 300 to 800 °C for 30 min. Nanoindentation tests were conducted to investigate the evolution of mechanical properties with annealing for the Mo-based thin film. When subjected to annealing at temperatures below 700 °C, the Mo-based thin film retained its fully amorphous structure. It displayed enhanced hardness and Young's modulus due to the annihilation of free volume with annealing. Increasing the annealing temperature to 700 °C and 800 °C resulted in surface oxidation and crystallization of the Mo-based TFMG, respectively, leading to a continuous decline in its mechanical properties. When employed as the diffusion barrier between Cu and Si, the Mo-based barrier layer effectively blocked the diffusion of Cu atoms through the barrier at temperatures below 800 °C. The failure of the barrier occurred at 800 °C due to the crystallization of the amorphous phase. Such excellent diffusion barrier performance of the thermally stable Mo-Co-B TFMG makes it a promising candidate as the barrier material in Cu metallization.

Study of the sputtered Mo/TaN and Mo-Ta thin film as diffusion barrier for copper metallization

Comparison of Ru/Ta and Ru/TaN as Barrier Stack for Copper Metallization

Enhanced diffusion barrier property of nanolayered NbMoTaW/TiVCr high entropy alloy for copper metallization

Investigation of Co/TaN Bilayer As Cu Diffusion Barrier

Thermally stable Mo-Co-B thin film metallic glass as a potential diffusion barrier in Cu/Si contact system

Properties of Ta Film as Diffusion Barrier in the Copper Metallization

5 - Nm -Thick TaSiC Amorphous Films Stable Up to 750°C As a Diffusion Barrier for Copper Metallization

Superior Thermal Stability of Ta/Tan Bi-Layer Structure for Copper Metallization

Diffusion Barrier Properties of Ta Films Deposited with Different Rates

Study of A Single Layer Ultrathin Como Film As A Direct Plateable Adhesion/Barrier Layer for Next Generation Interconnect

Improved Barrier Properties of Ultrathin Ru Film with Tan Interlayer for Copper Metallization

Influence of Tantalum/tantalum Nitride Barriers and Caps on the High-Temperature Properties of Copper Metallization for Wide-Band Gap Applications

Characteristics of Plasma-Treated Amorphous Ta-Si-C Film As a Diffusion Barrier for Copper Metallization

The Thermal and Electrical Properties of CoMo Alloys As Copper Adhesion/barrier Layers

Effect of Thickness Scaling on the Permeability and Thermal Stability of Ta(N) Diffusion Barrier

High-Temperature Ta Diffusion in the Grain Boundary of Thin Cu Films

Electromigration Behavior of Cu Metallization Interfacing with Ta Versus TaN at High Temperatures

Ultra-Thin Ru/TaN Bi-Layer as Diffusion Barrier to Seedless Copper Interconnect

Sputtered Ru–Ti, Ru–N and Ru–Ti–N Films As Cu Diffusion Barrier

Thermal stability of Ta-Si-N/Zr barrier in Cu metallization

Failure Mechanism of 5 Nm Thick Ta–Si–C Barrier Layers Against Cu Penetration at 750–800°C