Abstract:Novel Ni-doped TaN (Ni-Ta-N) films are deposited by remote plasma-enhanced atomic layer deposition (ALD) with pentakis(dimethylamino) tantalum, nickelocene, and NH3 precursors for Cu diffusion barriers. Various Ni-Ta-N films with different compositions are achieved by changing the deposition cycles (n) of Ni sublayer while fixing the deposition cycles of TaN sublayer at 2. As n increases from 1 to 6, the root-mean-square roughness of the deposited film increases from 0.150 to 0.527 nm, and the resistivity decreases from 0.18 to 1.1 x 10(-2) Omega cm. After annealing at 400 degrees C for 30 min in the forming gas (N-2/H-2), these films still maintain an amorphous texture and demonstrate a negligible reduction of resistivity and a weak increase of density. Subsequently, the barrier effects of the Ni-Ta-N films with different compositions are compared against Cu diffusion after annealing. The results reveal that the Ni-Ta-N films with n <= 4 exhibit barrier effects comparable with the ALD TaN film even after annealing at 550 degrees C. Further, a 3 nm ultrathin Ni-Ta-N film with n = 4, corresponding to an addition of similar to 22 at. % Ni to TaN, cannot only reduce the film resistivity by 78% but also effectively block Cu diffusion after annealing at 450 degrees C for 30 min. Published by the AVS.

Diffusion Barrier Properties of Ta Films Deposited with Different Rates

Properties of Ta Film as Diffusion Barrier in the Copper Metallization

Growth of nanoscale Ta-Al-N diffusion barriers

Diffusion Barrier Properties Of Amorphous And Nanocrystalline Ta Films For Cu Interconnects

Study of the sputtered Mo/TaN and Mo-Ta thin film as diffusion barrier for copper metallization

Interface Stability and Microstructure of an Ultrathin Α-Ta/graded Ta(N)/TaN Multilayer Diffusion Barrier

Performance of RF Sputtering Deposited TaN as the Diffusion Barrier of Cu Interconnection

Thermal stability and microstructure of graded α-Ta(N)/TaN bi-layer diffusion barrier

Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier

Characteristics of Plasma-Treated Amorphous Ta-Si-C Film As a Diffusion Barrier for Copper Metallization

Design and Fabrication of Ultrathin and Highly Thermal-Stable Α-Ta/graded Ta(N)/TaN Multilayer As Diffusion Barrier for Cu Interconnects

TaN Diffusion Barrier Layers Deposited by Reactive Magnetron Sputtering

COMPARATIVE STUDY OF IONIZED METAL PLASMA Ta, TaN AND MULTISTACKED Ta/TaN STRUCTURE AS DIFFUSION BARRIERS FOR Cu METALLIZATION

Barrier layer and annealing temperature dependent microstructure evolution of nanocrystalline Cu films

Effects of Electric Field Annealing on the Interface Diffusion of Cu/Ta/Si Stacks

Preparation and Properties Characterization of Gradient Alpha-Ta(N)/Tan Bi-Layer Diffusion Barrier

Diffusion Barrier Performance of W/Ta-W-N Double Layers for Cu Metallization

Comparison of Ru/Ta and Ru/TaN as Barrier Stack for Copper Metallization

Thermal stability of Ta-Si-N/Zr barrier in Cu metallization

Study on Ta(N) Ultrathin Metal Diffusion Barrier Layer in Integrated Circuits

Diffusion Barrier Performance of Reactively Sputtered Ta–W–N Between Cu and Si