Abstract:Ta-Si-C film was prepared by magnetron sputtering, and the thermal stability of the plasma-treated film as a copper diffusion barrier was evaluated. The barrier properties and failure behaviors of the studied films were elucidated using a four-point probe, x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The as-deposited Ta-Si-C film had an amorphous structure, and the structure remained stable at an elevated temperature, allowing the film to be adopted as a barrier to inhibit Cu diffusion. The Cu/Ta26Si41C32/Si stacked structure had a failure temperature of 750°C/1 min when the 5-nm-thick Ta26Si41C32 film was treated by exposure to Ar/H2 plasma mixture, while the stacked film failed at 800°C/1 min when treated by exposure to Ar/N2 plasma mixture. Using the Ar/N2 plasma treatment favorably enhanced the thermal stability of the Ta26Si41C32 thin film as a barrier for Cu interconnections. When the Ta-Si-C film thickness was further reduced to 2 nm, the film retained the barrier effect at 650°C, 700°C, and 750°C for Ta34Si47C18, Ta30Si44C25, and Ta26Si41C32 compositions, respectively.

Properties of Ta Film as Diffusion Barrier in the Copper Metallization

Diffusion Barrier Properties of Ta Films Deposited with Different Rates

Characteristics of Plasma-Treated Amorphous Ta-Si-C Film As a Diffusion Barrier for Copper Metallization

Performance of RF Sputtering Deposited TaN as the Diffusion Barrier of Cu Interconnection

Study of the sputtered Mo/TaN and Mo-Ta thin film as diffusion barrier for copper metallization

Reaction of the SiO2/Ta Interface and Its Influence on Cu Diffusion

Diffusion Barrier Properties Of Amorphous And Nanocrystalline Ta Films For Cu Interconnects

Design and Fabrication of Ultrathin and Highly Thermal-Stable Α-Ta/graded Ta(N)/TaN Multilayer As Diffusion Barrier for Cu Interconnects

Interface Reaction of SiO2/Ta and Its Influence on Cu Diffusion

Diffusion Barrier Performance of W/Ta-W-N Double Layers for Cu Metallization

Growth of nanoscale Ta-Al-N diffusion barriers

TaN Diffusion Barrier Layers Deposited by Reactive Magnetron Sputtering

Comparison of Ru/Ta and Ru/TaN as Barrier Stack for Copper Metallization

Interface Stability and Microstructure of an Ultrathin Α-Ta/graded Ta(N)/TaN Multilayer Diffusion Barrier

COMPARATIVE STUDY OF IONIZED METAL PLASMA Ta, TaN AND MULTISTACKED Ta/TaN STRUCTURE AS DIFFUSION BARRIERS FOR Cu METALLIZATION

5 - Nm -Thick TaSiC Amorphous Films Stable Up to 750°C As a Diffusion Barrier for Copper Metallization

Tan/Ta As an Effective Diffusion Barrier for Direct Contact of Copper and Nisi

Diffusion Barrier Performance of Reactively Sputtered Ta–W–N Between Cu and Si

Thermal stability of Ta-Si-N/Zr barrier in Cu metallization

Improved Barrier Properties of Ultrathin Ru Film with Tan Interlayer for Copper Metallization

Low-Resistivity Ru-Ta-C Barriers for Cu Interconnects