Abstract:Thin film metallic glass (TFMG) has demonstrated significant potential for applications in the semiconductor industry. In this work, fully amorphous Mo-Co-B thin films with a smooth surface and dense microstructure were prepared through magnetron sputtering. The thermal stability and diffusion barrier performance of the Mo-based TFMG were evaluated through vacuum annealing at temperatures ranging from 300 to 800 °C for 30 min. Nanoindentation tests were conducted to investigate the evolution of mechanical properties with annealing for the Mo-based thin film. When subjected to annealing at temperatures below 700 °C, the Mo-based thin film retained its fully amorphous structure. It displayed enhanced hardness and Young's modulus due to the annihilation of free volume with annealing. Increasing the annealing temperature to 700 °C and 800 °C resulted in surface oxidation and crystallization of the Mo-based TFMG, respectively, leading to a continuous decline in its mechanical properties. When employed as the diffusion barrier between Cu and Si, the Mo-based barrier layer effectively blocked the diffusion of Cu atoms through the barrier at temperatures below 800 °C. The failure of the barrier occurred at 800 °C due to the crystallization of the amorphous phase. Such excellent diffusion barrier performance of the thermally stable Mo-Co-B TFMG makes it a promising candidate as the barrier material in Cu metallization.

5 - Nm -Thick TaSiC Amorphous Films Stable Up to 750°C As a Diffusion Barrier for Copper Metallization

Failure Mechanism of 5 Nm Thick Ta–Si–C Barrier Layers Against Cu Penetration at 750–800°C

Highly Thermal-Stable Amorphous TaSi2Cx Thin Films

Characteristics of Plasma-Treated Amorphous Ta-Si-C Film As a Diffusion Barrier for Copper Metallization

Thermal stability of Ta-Si-N/Zr barrier in Cu metallization

Study of the sputtered Mo/TaN and Mo-Ta thin film as diffusion barrier for copper metallization

Influence of Tantalum/tantalum Nitride Barriers and Caps on the High-Temperature Properties of Copper Metallization for Wide-Band Gap Applications

Thermally stable Mo-Co-B thin film metallic glass as a potential diffusion barrier in Cu/Si contact system

Ultrathin Ru–Ta–C Barriers for Cu Metallization

Thermally Stable Amorphous (Almonbsitativzr)(50)N(50) Nitride Film As Diffusion Barrier In Copper Metallization

Low-Resistivity Ru-Ta-C Barriers for Cu Interconnects

Thermal stability of Si/SiC/ta-C composite coatings and improvement of tribological properties through high-temperature annealing

Evaluation of the thermal stability of TiW/Cu heterojunctions using a combined SXPS and HAXPES approach

High-Temperature Ta Diffusion in the Grain Boundary of Thin Cu Films

Diffusion Barrier Properties Of Amorphous And Nanocrystalline Ta Films For Cu Interconnects

Superior Thermal Stability of Ta/Tan Bi-Layer Structure for Copper Metallization

Properties of Ta Film as Diffusion Barrier in the Copper Metallization

A Heating and Diffusion Barrier Based on TaSiNx for Miniaturized IC Devices

Enhanced diffusion barrier property of nanolayered NbMoTaW/TiVCr high entropy alloy for copper metallization

Thermal Stability and Performance of Nbsitatizr High-Entropy Alloy Barrier for Copper Metallization

Tan/Ta As an Effective Diffusion Barrier for Direct Contact of Copper and Nisi