Thermal Stability and Performance of Nbsitatizr High-Entropy Alloy Barrier for Copper Metallization

Ming-Hung Tsai,Chun-Wen Wang,Che-Wei Tsai,Wan-Jui Shen,Jien-Wei Yeh,Jon-Yiew Gan,Wen-Wei Wu
DOI: https://doi.org/10.1149/2.056111jes
IF: 3.9
2011-01-01
Journal of The Electrochemical Society
Abstract:Development of better diffusion barriers for Cu metallization is one of the key issues for the microelectronics industry. Although metallic diffusion barriers offer many advantages, their application is hindered due to their inferior thermal stability relative to ceramic barriers. Here we report on a metallic diffusion barrier, NbSiTaTiZr, which shows thermal stability comparable to ceramic barriers. The outstanding performance of NbSiTaTiZr is due to its better structural and chemical stability at high temperatures. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.056111jes] All rights reserved.
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