Exceptional Thermal Stability and Properties of Amorphous High-Entropy SiNbTaTiZr Thin Films

Wei-Lin Hsu,Chun-Yang Cheng,Jien-Wei Yeh
DOI: https://doi.org/10.1007/s44210-024-00030-6
2024-01-01
Abstract:Our previous strategy was further used to design an amorphous structure with exceptional thermal stability. SixNbTaTiZr (x = 0, 1) thin films were investigated on amorphous structure, thermal stability, mechanical and electrical properties. The amorphous structure of NbTaTiZr is retained after vacuum annealing at 500 °C for 1 h and crystallizes after annealing at 550 °C for 1 h whereas that of SiNbTaTiZr is retained at 850 °C for 1 h and crystallizes at 900 °C for 1 h. In addition, thermal stability of amorphous SiNbTaTiZr is also superior than reported amorphous alloy films. Thermodynamic, topological and kinetic factors governing the exceptional thermal stability of SiNbTaTiZr are discussed via high entropy effect, mixing enthalpy, melting point, atomic size difference and multi-element-cooperation diffusion, respectively. SiNbTaTiZr amorphous film has higher nanohardness, Young’s modulus, extremely low roughness, and resistivity but smaller negative temperature coefficient of resistivity than NbTaTiZr. This is mainly attributable to the large negative mixing enthalpy between Si and other elements. All these merits make SiNbTaTiZr a promising amorphous thin film for many advanced applications such as high-temperature diffusion barriers, reaction barriers, and light and heat reflectors of solar energy.
What problem does this paper attempt to address?