High-entropy BNbTaTiZr Thin Film with Excellent Thermal Stability of Amorphous Structure and Its Electrical Properties

Chun-Yang Cheng,Jien-Wei Yeh
DOI: https://doi.org/10.1016/j.matlet.2016.09.050
IF: 3
2016-01-01
Materials Letters
Abstract:Equi-atomic BNbTaTiZr composition was designed to achieve a thin film with exceptional thermal stability of amorphous structure. Amorphous structure of BNbTaTiZr thin film can sustain after 1h vacuum annealing at 800°C. To elucidate the exceptional thermal stability, thermodynamic, topological and kinetic factors are discussed through high entropy effect, atomic size difference and sluggish diffusion phenomena. The amorphous film also displays high electrical resistivity 246μΩ-cm comparing with most amorphous metals. Negative temperature coefficient of resistivity is observed. The reason is related with the increased interatomic spacings with increasing temperature.
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