Extremely Low Contact Resistivity of Bi 2 Te 3 -Based Modules Enabled by NiP-Based Alloy Barrier

Erbiao Min,Yifeng Ling,Linghao Zhao,Ying Xu,Li-Yin Gao,Juan Li,Jianghe Feng,Ping Zhang,Ruiheng Liu,Rong Sun
DOI: https://doi.org/10.1021/acsami.3c14646
IF: 9.5
2023-12-06
ACS Applied Materials & Interfaces
Abstract:Electrode diffusion barrier plays an important role in thermoelectric cooling devices. Compared with p-type Bi(0.5)Sb(1.5)Te(3), the compatibility between commercial Ni barrier and n-type Bi(2)Te(2.7)Se(0.3) is a key bottleneck to enhance the performance of Bi(2)Te(3)-based cooling devices. This paper proposed a NiP alloy barrier to improve the compatibility with n-type Bi(2)Te(2.7)Se(0.3), and systemically investigated the contact and interfacial dynamics properties. Due to the low diffusion...
materials science, multidisciplinary,nanoscience & nanotechnology
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