Structural stability of thermoelectric diffusion barriers: Experimental results and first principles calculations

Hsiao-Hsuan Hsu,Chun-Hu Cheng,Yu-Li Lin,Shan-Haw Chiou,Chiung-Hui Huang,Chin-Pao Cheng
DOI: https://doi.org/10.1063/1.4817511
IF: 4
2013-07-29
Applied Physics Letters
Abstract:This study demonstrates the feasibility of producing a tantalum nitride (TaN) thin film as a diffusion barrier and buffer layer for p-type bismuth telluride [(Bi,Sb)2Te3] thermoelectric devices. A network of TaN with nitrogen (N) incorporation is structurally more stable on (Bi,Sb)2Te3 than the conventional Ni diffusion barrier because of less inter-diffusion and a greater likelihood of stoichiometry in the TaN/(Bi,Sb)2Te3 interface. The atomic inter-diffusion between the barrier layers and (Bi,Sb)2Te3 was evaluated in terms of interface adhesion energy using nanoscratching, and proved with first-principles calculations.
physics, applied
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