Study on the Preparation and Properties of a Co-Based Barrier Layer by Diffusion Welding

Shangwei Jiang,Zhixiang Kuang,Xiaoming Hu,Xin Chen,Fuxiang Zou,Xi’an Fan
DOI: https://doi.org/10.1007/s11664-023-10895-9
IF: 2.1
2024-03-03
Journal of Electronic Materials
Abstract:In order to improve the stability of Bi 2 Te 3 -based thermoelectric devices, we attempted to prepare a barrier layer via diffusion welding using Co powder as the barrier materials. The diffusion welding process was conducted at 674 K for a duration of 5 min. The optimal connection was achieved at the interfaces of Co/Bi 0.4 Sb 1.6 Te 3 and Co/Bi 2 Te 2.7 Se 0.3 . The results showed that the Co/Bi 0.4 Sb 1.6 Te 3 joint had diffusion thickness of 1.6 μm, contact resistivity of 0.83 μΩ cm 2 , and bonding strength of 4.86 MPa for the barrier layer. Similarly, the Co/Bi 2 Te 2.7 Se 0.3 joint had diffusion thickness of 1.6 μm, contact resistivity of 0.75 μΩ cm 2 , and bonding strength of 3.99 MPa for the barrier layer. The thermoelectric device fabricated through this process exhibited a hot–cold cycle number of 35,000, which was significantly higher than the device with a Ni-based barrier layer under similar experimental conditions. Thus, it indicates that Co is a promising material for the preparation of barrier layers in Bi 2 Te 3 -based thermoelectric devices.
engineering, electrical & electronic,materials science, multidisciplinary,physics, applied
What problem does this paper attempt to address?