Abstract:Electronic devices and circuits based on wide-band gap (WBG) semiconductors and intended for operation at temperatures significantly exceeding 300 degrees C are currently being developed. It is important that the adjunct metallization matches the high-temperature properties of the devices. In the case of the technologically important Cu metallization, the most frequently used cap and barrier layer materials are Ta, TaN and combinations of these. They stabilize the interconnects and prevent Cu from diffusing into the surrounding material. In this study, different combinations of Ta and TaN layers are evaluated electrically and morphologically after high-temperature treatments. The cap/Cu/barrier stack shows an appreciable increase in sheet resistance above 600 degrees C for the asymmetric combinations Ta/Cu/TaN and TaN/Cu/Ta. This degradation is shown to be closely related to a substantial diffusion of Ta across the Cu film and on to the TaN layer, where Ta1+xN forms. The symmetrical combinations Ta/Cu/Ta and TaN/Cu/TaN show only small changes in sheet resistance on even after anneals at 800 degrees C. A less pronounced Ta diffusion into the Cu film is found for the Ta/Cu/Ta combination. The experimental observations are interpreted in terms of Cu grain growth, Ta segregation in the Cu grain boundaries and morphological degradation of the Cu film. (C) 2015 Elsevier B.V. All rights reserved.

Influence of Tantalum/tantalum Nitride Barriers and Caps on the High-Temperature Properties of Copper Metallization for Wide-Band Gap Applications

Electromigration Behavior of Cu Metallization Interfacing with Ta Versus TaN at High Temperatures

High-Temperature Ta Diffusion in the Grain Boundary of Thin Cu Films

Thermal Stability and Performance of Nbsitatizr High-Entropy Alloy Barrier for Copper Metallization

Tan/Ta As an Effective Diffusion Barrier for Direct Contact of Copper and Nisi

5 - Nm -Thick TaSiC Amorphous Films Stable Up to 750°C As a Diffusion Barrier for Copper Metallization

Superior Thermal Stability of Ta/Tan Bi-Layer Structure for Copper Metallization

Eff ects of Diff erent Mechanical Alloying Parameters on Microstructure of High Temperature Nanocrystalline Cu-Ta Alloys

Effect of tantalum and Ni Ta barriers on inter-diffusion between nickel coating and GH3535 alloy at 700 °C

Morphological Instability of Ag Films Caused by Phase Transition in the Underlying Ta Barrier Layer

Study of the sputtered Mo/TaN and Mo-Ta thin film as diffusion barrier for copper metallization

Diffusion Barrier Performance of W/Ta-W-N Double Layers for Cu Metallization

Enhanced diffusion barrier property of nanolayered NbMoTaW/TiVCr high entropy alloy for copper metallization

Thermal stability of Ta-Si-N/Zr barrier in Cu metallization

Thermally Stable Amorphous (Almonbsitativzr)(50)N(50) Nitride Film As Diffusion Barrier In Copper Metallization

Effect of Thickness Scaling on the Permeability and Thermal Stability of Ta(N) Diffusion Barrier

Failure Mechanism of 5 Nm Thick Ta–Si–C Barrier Layers Against Cu Penetration at 750–800°C

Design and Fabrication of Ultrathin and Highly Thermal-Stable Α-Ta/graded Ta(N)/TaN Multilayer As Diffusion Barrier for Cu Interconnects

Performance of RF Sputtering Deposited TaN as the Diffusion Barrier of Cu Interconnection

COMPARATIVE STUDY OF IONIZED METAL PLASMA Ta, TaN AND MULTISTACKED Ta/TaN STRUCTURE AS DIFFUSION BARRIERS FOR Cu METALLIZATION

Ultrathin Ru–Ta–C Barriers for Cu Metallization