Abstract:Gate oxide breakdown (OBD) is a key factor limiting the useful lifetime of an integrated circuit. Unfortunately, the conventional approach for full chip OBD reliability analysis assumes a uniform oxide thickness and worst-case temperature for all devices. In practice, however, gate oxide thickness varies from die-to-die and within-die and hence may cause different reliability for different devices even chips. Moreover, due to the increased across-die temperature variation, such difference may be exacerbated. Thus, as the precision of variation control worsens, an alternative reliability analysis approach is needed. In this paper, we propose a statistical framework for chip-level gate OBD reliability analysis while considering both die-to-die and within-die components of thickness variations as well as the across-die temperature variation. The thickness of each device is modeled as a distinct random variable and thus the full chip reliability estimation problem is defined on a huge sample space of several million devices. We observe that the chip-level OBD reliability function is independent of the relative location of the individual devices. This enables us to transform the problem such that the resulting representation can be expressed in terms of much fewer random variables. Using this transformation, we present a computationally efficient and accurate approach for estimating the full chip reliability while considering spatial correlations of gate oxide thickness as well as temperature variation. We show that, compared to Monte Carlo simulation, the proposed method incurs an error of only around 1% while improving the runtime by more than three orders of magnitude.

A Comprehensive study of reliability improvement for 65nm Cu/Low-k process

Computational Analysis of Mechanical and Electromigration Reliability Problems

Wafer Level Reliability Evaluation of Gate Oxide for Advanced CMOS Process

A study of post-etch wet clean on electrical and reliability performance of Cu/low k interconnections

Reliability Studies of Barrier Layers for Cu/PAE Low-K Interconnects.

Effect of in-line electron beam treatment on the electrical performance of Cu/organic low-k damascene interconnects

Post-fabrication measurement-driven oxide breakdown reliability prediction and management.

A Statistical Framework for Post-Fabrication Oxide Breakdown Reliability Prediction and Management

Process Variation and Temperature-Aware Full Chip Oxide Breakdown Reliability Analysis.

Investigation of the mechanical characteristics of the Cu/low-k BEOL under wire bonding process loading

Simulation and experiments of stress migration for Cu/low-k BEoL

Thermal Stress Analysis for the Low-k Dielectric Layers of Cu Interconnects in a 45 nm Chip

Understanding the Impact of Surface Engineering, Structure, and Design on Electromigration Through Monte Carlo Simulation and In‐Situ SEM Studies

Comparison of the Time-Dependent Physical Processes in the Electromigration of Deep Submicron Copper and Aluminum Interconnects

The Stress Analysis and Parametric Studies for the Low-K Layers of a Chip in the Flip-Chip Process.

The Study of the Reliability of Complex Components during the Electromigration Process

Improved Electrochemical Plating for Void-Free Copper Line in ULSI Interconnect

Investigation of Defect Formation in Porous Ultra Low K Film (k=2.5) for 28nm Technological Node

Stress modeling of Cu/low-k BEoL - application to stress migration

CVD-Mn/CVD-Ru-based barrier/liner solution for advanced BEOL Cu/Low-k interconnects

Electromigration reliability issues in dual-damascene Cu interconnections