Abstract:The decreasing feature sizes in complementary metal-oxide semiconductor (CMOS) transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant (high-k) because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability. In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology. Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties. It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling. In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices. Therefore, detailed atomicscale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks, are highly required. In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed. Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy (HRTEM) and the related techniques based on scanning transmission electron microscopy (STEM), including high-angle annular darkfield (HAADF) imaging (also known as Z-contrast imaging), electron energy-loss spectroscopy (EELS), and energy dispersive X-ray spectroscopy (EDS), due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric gate stacks in the present and future generations of CMOS devices. In Section 1 of this review, the working principles of each technique are briefly introduced and their key features are outlined. In Section 2, microstructural characterizations of high-k gate dielectrics at atomic-scale by electron microscopy are critically reviewed by citing some recent results reported on high-k gate dielectrics. In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed. The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4. Finally, we end this review with personal perspectives towards the future challenges of atomic-scale material characterization in advanced CMOS gate stacks.

Investigation of Defect Formation in Porous Ultra Low K Film (k=2.5) for 28nm Technological Node

A Comprehensive study of reliability improvement for 65nm Cu/Low-k process

Effect of in-line electron beam treatment on the electrical performance of Cu/organic low-k damascene interconnects

Fractures of Ultra-Low-k Material in a Chip During a Flip-Chip Process

The Stress Analysis and Parametric Studies for the Low-K Layers of a Chip in the Flip-Chip Process.

Study on the mechanical properties of ultra-low dielectric film by tensile test

Fabrication of the Low-K Films with Tunable K Value As Spacers in Advanced CMOS Technology

Characterization of PECVD ultralow dielectric constant porous SiOCH films using triethoxymethylsilane precursor and cinene porogen

The Characterization of Low-K Thin Films and Their Fracture Analysis in a WLCSP Device

The Inspection and Solution of Inline CT Defect for 28NM Process Improvement

High-K Bubble Defect Researches in Stack-BSI Process Product

Optimization of Wet strip after Metal Hard Mask All-in-One Etch for metal void reduction and yield improvement

Analysis of Linewidth Uniformity and Line Edge/Width Roughness in a 5 Nm Logic SAQP Process

Defectivity Characterization of post-CMP Voiding in 32nm Cu Metallization

Reliability Studies of Barrier Layers for Cu/PAE Low-K Interconnects.

Pure Silica Zeolite Films as Low-k Dielectrics by Spin-On of Nanoparticle Suspensions

The Type and Solution of Inline Poly Residue Defect for 28 HK Process Improvement

Measuring the Fracture Toughness of Low-K Thin Films Used in Advanced Packaging

Challenges in Atomic-Scale Characterization of High-k Dielectrics and Metal Gate Electrodes for Advanced CMOS Gate Stacks

Stress Analysis of Cu/low-k Interconnect Structure During Whole Cu-CMP Process Using Finite Element Method.

Investigating metal oxide resists for patterning 28-nm pitch structures using single exposure extreme ultraviolet: defectivity, electrical test, and voltage contrast study