Abstract:The ultra-low dielectric constant (ULK) materials is implemented in the copper/low-k interconnection structures in industry in order to minimize the RC delay and crosstalk noise. The mechanical property of ULK dielectrics is weak compared to traditional dielectrics. So it poses a significant risk to the device reliability, not only in the fabrication process, but also in packaging processes and reliability tests. When using numerical simulations to assess the structural integrity associated with low-k integration, accurate mechanical property of ULK materials is also an important parameter that needed to be measured. In this paper, we present a method of measuring the mechanical properties of ULK materials. This method is suitable for a variety of materials which can be deposited or grown on a silicon substrate. The fabricating processes mainly include lithography, temporary bonding, grinding, Si etching and debonding. In addition, we designed two kinds of test structures. One is with pre-crack, and the other is without pre-crack. Each structure has two kinds of geometry sizes. The tensile test was done by using the in-situ tensiometer apparatus with uniaxial stretching. The stress-strain diagrams of the specimens show an elastic modulus $\mathbf{E=1.2}$ GPa and tensile strength is about 13.5 Mpa for the structure without pre-crack, which is lower than that of bulk low-k material. The samples with two kinds of geometry sizes have similar modulus values which can be converted by the measured results from the diagram. While other specimens show a critical energy release rate ${\mathrm{G}_{\mathrm{c}}=0.25\mathrm{J}/\mathrm{m}^{2}}$ for the structure with pre-crack, which is also lower than that of bulk material. The results illustrate that the ability to resist fracture of low-k thin films is weak. It provides a possible method to measure the mechanical properties of ULK thin films.

Fractures of Ultra-Low-k Material in a Chip During a Flip-Chip Process

The Energy Release Rate of the Micro-Cracks in a Ultralow-K Chip During the Flip Chip Process

The Stress Analysis and Parametric Studies for the Low-K Layers of a Chip in the Flip-Chip Process.

Stress Modeling for the Impacts of Flip Chip Process on the Ultralow-K Chips

Assess Low-K/ultralow-k Materials Integrity by Shear Test on Bumps of a Chip

Study on BEOL Failures in a Chip by Shear Tests of Copper Pillar Bumps

Thermal Stress Analysis for the Low-k Dielectric Layers of Cu Interconnects in a 45 nm Chip

Thermal Stress Analysis of the Low-K Layer in a Flip-Chip Package

The Characterization of Low-K Thin Films and Their Fracture Analysis in a WLCSP Device

Fractures of Low-K Materials in a RF Package with Integrated Passive Device Based on TGV

Computational Analysis of Mechanical and Electromigration Reliability Problems

The Finite Element Analysis Of Serrated Chip Formation In High-Speed Cuffing Auto Panel Dies

Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs

A Comprehensive study of reliability improvement for 65nm Cu/Low-k process

Stress Analysis of Cu/low-k Interconnect Structure During Whole Cu-CMP Process Using Finite Element Method.

Measuring the Fracture Toughness of Low-K Thin Films Used in Advanced Packaging

Study on the mechanical properties of ultra-low dielectric film by tensile test

Competing Fracture Modeling of Thin Chip Pick-Up Process

Investigation of Defect Formation in Porous Ultra Low K Film (k=2.5) for 28nm Technological Node

Simulation and experiments of stress migration for Cu/low-k BEoL

Stress modeling of Cu/low-k BEoL - application to stress migration